Abstract
In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. Using the same model concepts, we now employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.
| Original language | English |
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| Title of host publication | Amorphous and nanocrystalline silicon science and technology--2005 |
| Subtitle of host publication | Symposium March 28-April 1, 2005, San Francisco, California, U.S.A. |
| Editors | Robert W. Collins |
| Place of Publication | Warrendale, Pa. |
| Publisher | Materials Research Society |
| Pages | 513-518 |
| Number of pages | 6 |
| ISBN (Print) | 1558998152 |
| Publication status | Published - 2005 |
| Event | Symposium A: Amorphous and Nanocrystalline Silicon Science and Technology - San Francisco, United States Duration: 28 Mar 2005 → 1 Apr 2005 http://www.mrs.org/s05-program-a/ |
Publication series
| Name | Materials Research Society symposium proceedings |
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| Volume | 862 |
Conference
| Conference | Symposium A: Amorphous and Nanocrystalline Silicon Science and Technology |
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| Country/Territory | United States |
| City | San Francisco |
| Period | 28/03/05 → 1/04/05 |
| Internet address |