Abstract
The study addresses the lack of consistency with reporting of Ga2O3 photodetector performances and assesses the impact of illumination intensity, illumination wavelength, and voltage bias on photodetector responsivity and time response. The approach reveals the electronic processes at play during Ga2O3 photodetector operation and provides qualitative insights into the defect spectroscopy of the materials. More importantly, the study highlights that high performance claims could be engineered through selective use of testing conditions and warns of malpractices when reporting performances, which could result in misleading comparisons. Finally, the study makes recommendations for future works reporting photodetector performances to enable normalization of performances, allowing fair comparisons across the literature. These recommendations are not specific to Ga2O3 and can be applied to other semiconductors.
Original language | English |
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Article number | 026108 |
Number of pages | 8 |
Journal | APL Electronic Devices |
Volume | 1 |
Issue number | 2 |
DOIs | |
Publication status | Published - 10 Apr 2025 |