Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek; R. Leyman; D. Carnegie; N. Bazieva; G. Erbert; S. Schulz; C. Reardon; S. Reynolds; E. Rafailov

doi:10.1063/1.4747724

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, S. Reynolds, E. Rafailov

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals’ difference frequency ~1 THz.(C) 2012 American Institute of Physics.

Original language	English
Article number	081114
Number of pages	4
Journal	Applied Physics Letters
Volume	101
Issue number	8
Early online date	23 Jul 2012
DOIs	https://doi.org/10.1063/1.4747724
Publication status	Published - 2012

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10.1063/1.4747724

http://apl.aip.org/resource/1/applab/v101/i8/p081114_s1

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APL 101 081114 2012
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Embargo ends: 31/12/99

Quantum dot-based semiconductor Terahertz transceiver systems
Leyman, R. (Author), Rafailov, E. (Supervisor), 2014
Student thesis: Doctoral Thesis › Doctor of Philosophy

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abstract = "Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals{\textquoteright} difference frequency ~1 THz.(C) 2012 American Institute of Physics.",

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AU - Kruczek, T.

AU - Leyman, R.

AU - Carnegie, D.

AU - Bazieva, N.

AU - Erbert, G.

AU - Schulz, S.

AU - Reardon, C.

AU - Reynolds, S.

AU - Rafailov, E.

PY - 2012

Y1 - 2012

N2 - Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals’ difference frequency ~1 THz.(C) 2012 American Institute of Physics.

AB - Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals’ difference frequency ~1 THz.(C) 2012 American Institute of Physics.

U2 - 10.1063/1.4747724

DO - 10.1063/1.4747724

M3 - Article

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

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ER -

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

Abstract

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Quantum dot-based semiconductor Terahertz transceiver systems

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