Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, S. Reynolds, E. Rafailov

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    Abstract

    Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals’ difference frequency ~1 THz.(C) 2012 American Institute of Physics.
    Original languageEnglish
    Article number081114
    Number of pages4
    JournalApplied Physics Letters
    Volume101
    Issue number8
    Early online date23 Jul 2012
    DOIs
    Publication statusPublished - 2012

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    Kruczek, T., Leyman, R., Carnegie, D., Bazieva, N., Erbert, G., Schulz, S., Reardon, C., Reynolds, S., & Rafailov, E. (2012). Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. Applied Physics Letters, 101(8), [081114]. https://doi.org/10.1063/1.4747724