Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth

Steve Reynolds, Reinhard Carius, Friedhelm Finger, Vladimir Smirnov

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    Photovoltaic properties of 4 mu m thick microcrystalline silicon p-i-n solar cells have been studied, over a range of crystallinity determined using Raman spectroscopy. Low-crystallinity material (below 10%) appears to absorb disproportionately strongly in the infrared, possibly due to increased light scattering or to relaxation of the crystal momentum selection rule. A minimum in solar cell efficiency is observed under AM 1.5 illumination when V-OC approximate to 580 mV, with blue response most strongly affected. This is consistent with a reduction in electron mobility to a value below that of amorphous silicon for low-crystallinity material, in agreement with time-of-flight measurements. (C) 2009 Elsevier B.V. All rights reserved.

    Original languageEnglish
    Pages (from-to)6392-6395
    Number of pages4
    JournalThin Solid Films
    Volume517
    Issue number23
    DOIs
    Publication statusPublished - 1 Oct 2009

    Cite this

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    title = "Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth",
    abstract = "Photovoltaic properties of 4 mu m thick microcrystalline silicon p-i-n solar cells have been studied, over a range of crystallinity determined using Raman spectroscopy. Low-crystallinity material (below 10{\%}) appears to absorb disproportionately strongly in the infrared, possibly due to increased light scattering or to relaxation of the crystal momentum selection rule. A minimum in solar cell efficiency is observed under AM 1.5 illumination when V-OC approximate to 580 mV, with blue response most strongly affected. This is consistent with a reduction in electron mobility to a value below that of amorphous silicon for low-crystallinity material, in agreement with time-of-flight measurements. (C) 2009 Elsevier B.V. All rights reserved.",
    author = "Steve Reynolds and Reinhard Carius and Friedhelm Finger and Vladimir Smirnov",
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    Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth. / Reynolds, Steve; Carius, Reinhard; Finger, Friedhelm; Smirnov, Vladimir.

    In: Thin Solid Films, Vol. 517, No. 23, 01.10.2009, p. 6392-6395.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth

    AU - Reynolds, Steve

    AU - Carius, Reinhard

    AU - Finger, Friedhelm

    AU - Smirnov, Vladimir

    PY - 2009/10/1

    Y1 - 2009/10/1

    N2 - Photovoltaic properties of 4 mu m thick microcrystalline silicon p-i-n solar cells have been studied, over a range of crystallinity determined using Raman spectroscopy. Low-crystallinity material (below 10%) appears to absorb disproportionately strongly in the infrared, possibly due to increased light scattering or to relaxation of the crystal momentum selection rule. A minimum in solar cell efficiency is observed under AM 1.5 illumination when V-OC approximate to 580 mV, with blue response most strongly affected. This is consistent with a reduction in electron mobility to a value below that of amorphous silicon for low-crystallinity material, in agreement with time-of-flight measurements. (C) 2009 Elsevier B.V. All rights reserved.

    AB - Photovoltaic properties of 4 mu m thick microcrystalline silicon p-i-n solar cells have been studied, over a range of crystallinity determined using Raman spectroscopy. Low-crystallinity material (below 10%) appears to absorb disproportionately strongly in the infrared, possibly due to increased light scattering or to relaxation of the crystal momentum selection rule. A minimum in solar cell efficiency is observed under AM 1.5 illumination when V-OC approximate to 580 mV, with blue response most strongly affected. This is consistent with a reduction in electron mobility to a value below that of amorphous silicon for low-crystallinity material, in agreement with time-of-flight measurements. (C) 2009 Elsevier B.V. All rights reserved.

    U2 - 10.1016/j.tsf.2009.02.107

    DO - 10.1016/j.tsf.2009.02.107

    M3 - Article

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    JF - Thin Solid Films

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    ER -