Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth

Steve Reynolds; Reinhard Carius; Friedhelm Finger; Vladimir Smirnov

doi:10.1016/j.tsf.2009.02.107

Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth

Steve Reynolds, Reinhard Carius, Friedhelm Finger, Vladimir Smirnov

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Abstract

Photovoltaic properties of 4 mu m thick microcrystalline silicon p-i-n solar cells have been studied, over a range of crystallinity determined using Raman spectroscopy. Low-crystallinity material (below 10%) appears to absorb disproportionately strongly in the infrared, possibly due to increased light scattering or to relaxation of the crystal momentum selection rule. A minimum in solar cell efficiency is observed under AM 1.5 illumination when V-OC approximate to 580 mV, with blue response most strongly affected. This is consistent with a reduction in electron mobility to a value below that of amorphous silicon for low-crystallinity material, in agreement with time-of-flight measurements. (C) 2009 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	6392-6395
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	23
DOIs	https://doi.org/10.1016/j.tsf.2009.02.107
Publication status	Published - 1 Oct 2009

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title = "Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth",

abstract = "Photovoltaic properties of 4 mu m thick microcrystalline silicon p-i-n solar cells have been studied, over a range of crystallinity determined using Raman spectroscopy. Low-crystallinity material (below 10\%) appears to absorb disproportionately strongly in the infrared, possibly due to increased light scattering or to relaxation of the crystal momentum selection rule. A minimum in solar cell efficiency is observed under AM 1.5 illumination when V-OC approximate to 580 mV, with blue response most strongly affected. This is consistent with a reduction in electron mobility to a value below that of amorphous silicon for low-crystallinity material, in agreement with time-of-flight measurements. (C) 2009 Elsevier B.V. All rights reserved.",

author = "Steve Reynolds and Reinhard Carius and Friedhelm Finger and Vladimir Smirnov",

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T1 - Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth

AU - Reynolds, Steve

AU - Carius, Reinhard

AU - Finger, Friedhelm

AU - Smirnov, Vladimir

PY - 2009/10/1

Y1 - 2009/10/1

N2 - Photovoltaic properties of 4 mu m thick microcrystalline silicon p-i-n solar cells have been studied, over a range of crystallinity determined using Raman spectroscopy. Low-crystallinity material (below 10%) appears to absorb disproportionately strongly in the infrared, possibly due to increased light scattering or to relaxation of the crystal momentum selection rule. A minimum in solar cell efficiency is observed under AM 1.5 illumination when V-OC approximate to 580 mV, with blue response most strongly affected. This is consistent with a reduction in electron mobility to a value below that of amorphous silicon for low-crystallinity material, in agreement with time-of-flight measurements. (C) 2009 Elsevier B.V. All rights reserved.

AB - Photovoltaic properties of 4 mu m thick microcrystalline silicon p-i-n solar cells have been studied, over a range of crystallinity determined using Raman spectroscopy. Low-crystallinity material (below 10%) appears to absorb disproportionately strongly in the infrared, possibly due to increased light scattering or to relaxation of the crystal momentum selection rule. A minimum in solar cell efficiency is observed under AM 1.5 illumination when V-OC approximate to 580 mV, with blue response most strongly affected. This is consistent with a reduction in electron mobility to a value below that of amorphous silicon for low-crystallinity material, in agreement with time-of-flight measurements. (C) 2009 Elsevier B.V. All rights reserved.

U2 - 10.1016/j.tsf.2009.02.107

DO - 10.1016/j.tsf.2009.02.107

M3 - Article

SN - 0040-6090

VL - 517

SP - 6392

EP - 6395

JO - Thin Solid Films

JF - Thin Solid Films

IS - 23

ER -

Correlation of structural and optoelectronic properties of thin film silicon prepared at the transition from microcrystalline to amorphous growth

Abstract

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