DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

Shamil Mirkhanov (Lead / Corresponding author), A. H. Quarterman, Hermann Kahle, Roman Bek, R. Pecoroni, C. J.C. Smyth, S. Vollmer, S. Swift, Peter Michler, Michael Jetter, K. G. Wilcox

Research output: Contribution to journalArticle

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Abstract

We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.

Original languageEnglish
Pages (from-to)1537-1539
Number of pages3
JournalElectronics Letters
Volume53
Issue number23
Early online date10 Oct 2017
DOIs
Publication statusPublished - 13 Nov 2017

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Videodisks
Semiconductor materials
Distributed Bragg reflectors
Spreaders
Wavelength
Laser resonators
Silicon carbide
Semiconductor quantum wells
Resonators
Lasers
Hot Temperature

Cite this

Mirkhanov, Shamil ; Quarterman, A. H. ; Kahle, Hermann ; Bek, Roman ; Pecoroni, R. ; Smyth, C. J.C. ; Vollmer, S. ; Swift, S. ; Michler, Peter ; Jetter, Michael ; Wilcox, K. G. / DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm. In: Electronics Letters. 2017 ; Vol. 53, No. 23. pp. 1537-1539.
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title = "DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm",
abstract = "We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15{\%}. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.",
author = "Shamil Mirkhanov and Quarterman, {A. H.} and Hermann Kahle and Roman Bek and R. Pecoroni and Smyth, {C. J.C.} and S. Vollmer and S. Swift and Peter Michler and Michael Jetter and Wilcox, {K. G.}",
note = "The research leading to these results has received funding from the People Programme (Marie Curie Actions) of the European’s Seventh Framework Programme (FP7/2007-2013) under REA grant agreement no. 608133 and Scottish Funding Council (SFC) Horizon fund.",
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Mirkhanov, S, Quarterman, AH, Kahle, H, Bek, R, Pecoroni, R, Smyth, CJC, Vollmer, S, Swift, S, Michler, P, Jetter, M & Wilcox, KG 2017, 'DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm', Electronics Letters, vol. 53, no. 23, pp. 1537-1539. https://doi.org/10.1049/el.2017.2689

DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm. / Mirkhanov, Shamil (Lead / Corresponding author); Quarterman, A. H.; Kahle, Hermann; Bek, Roman; Pecoroni, R.; Smyth, C. J.C.; Vollmer, S.; Swift, S.; Michler, Peter; Jetter, Michael; Wilcox, K. G.

In: Electronics Letters, Vol. 53, No. 23, 13.11.2017, p. 1537-1539.

Research output: Contribution to journalArticle

TY - JOUR

T1 - DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

AU - Mirkhanov, Shamil

AU - Quarterman, A. H.

AU - Kahle, Hermann

AU - Bek, Roman

AU - Pecoroni, R.

AU - Smyth, C. J.C.

AU - Vollmer, S.

AU - Swift, S.

AU - Michler, Peter

AU - Jetter, Michael

AU - Wilcox, K. G.

N1 - The research leading to these results has received funding from the People Programme (Marie Curie Actions) of the European’s Seventh Framework Programme (FP7/2007-2013) under REA grant agreement no. 608133 and Scottish Funding Council (SFC) Horizon fund.

PY - 2017/11/13

Y1 - 2017/11/13

N2 - We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.

AB - We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.

U2 - 10.1049/el.2017.2689

DO - 10.1049/el.2017.2689

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JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

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