DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

Shamil Mirkhanov; A. H. Quarterman; Hermann Kahle; Roman Bek; R. Pecoroni; C. J.C. Smyth; S. Vollmer; S. Swift; Peter Michler; Michael Jetter; K. G. Wilcox

doi:10.1049/el.2017.2689

DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

Shamil Mirkhanov (Lead / Corresponding author), A. H. Quarterman, Hermann Kahle, Roman Bek, R. Pecoroni, C. J.C. Smyth, S. Vollmer, S. Swift, Peter Michler, Michael Jetter, K. G. Wilcox

Research output: Contribution to journal › Article

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Abstract

We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In_0.13Ga_0.87As quantum wells embedded in strain-compensating GaAs_0.94P_0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.

Original language	English
Pages (from-to)	1537-1539
Number of pages	3
Journal	Electronics Letters
Volume	53
Issue number	23
Early online date	10 Oct 2017
DOIs	https://doi.org/10.1049/el.2017.2689
Publication status	Published - 13 Nov 2017

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Projects

1 Finished

Tuneable Gigahertz Mode Spaced Frequency Combs (Fellowship)

Wilcox, K.

Engineering and Physical Sciences Research Council

1/10/13 → 28/02/18

Project: Research

Profiles

Wilcox, Keith

Physics - Senior Lecturer (Teaching and Research)

Person: Academic

Cite this

Mirkhanov, S., Quarterman, A. H., Kahle, H., Bek, R., Pecoroni, R., Smyth, C. J. C., Vollmer, S., Swift, S., Michler, P., Jetter, M., & Wilcox, K. G. (2017). DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm. Electronics Letters, 53(23), 1537-1539. https://doi.org/10.1049/el.2017.2689

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title = "DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm",

abstract = "We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.",

author = "Shamil Mirkhanov and Quarterman, {A. H.} and Hermann Kahle and Roman Bek and R. Pecoroni and Smyth, {C. J.C.} and S. Vollmer and S. Swift and Peter Michler and Michael Jetter and Wilcox, {K. G.}",

note = "The research leading to these results has received funding from the People Programme (Marie Curie Actions) of the European{\textquoteright}s Seventh Framework Programme (FP7/2007-2013) under REA grant agreement no. 608133 and Scottish Funding Council (SFC) Horizon fund.",

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doi = "10.1049/el.2017.2689",

language = "English",

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pages = "1537--1539",

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DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm. / Mirkhanov, Shamil (Lead / Corresponding author); Quarterman, A. H.; Kahle, Hermann; Bek, Roman; Pecoroni, R.; Smyth, C. J.C.; Vollmer, S.; Swift, S.; Michler, Peter; Jetter, Michael; Wilcox, K. G.

In: Electronics Letters, Vol. 53, No. 23, 13.11.2017, p. 1537-1539.

Research output: Contribution to journal › Article

TY - JOUR

T1 - DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

AU - Mirkhanov, Shamil

AU - Quarterman, A. H.

AU - Kahle, Hermann

AU - Bek, Roman

AU - Pecoroni, R.

AU - Smyth, C. J.C.

AU - Vollmer, S.

AU - Swift, S.

AU - Michler, Peter

AU - Jetter, Michael

AU - Wilcox, K. G.

N1 - The research leading to these results has received funding from the People Programme (Marie Curie Actions) of the European’s Seventh Framework Programme (FP7/2007-2013) under REA grant agreement no. 608133 and Scottish Funding Council (SFC) Horizon fund.

PY - 2017/11/13

Y1 - 2017/11/13

N2 - We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.

AB - We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.

U2 - 10.1049/el.2017.2689

DO - 10.1049/el.2017.2689

M3 - Article

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VL - 53

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JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 23

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