Abstract
We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.
| Original language | English |
|---|---|
| Pages (from-to) | 1537-1539 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 53 |
| Issue number | 23 |
| Early online date | 10 Oct 2017 |
| DOIs | |
| Publication status | Published - 13 Nov 2017 |
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DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm. / Mirkhanov, Shamil (Lead / Corresponding author); Quarterman, A. H.; Kahle, Hermann; Bek, Roman; Pecoroni, R.; Smyth, C. J.C.; Vollmer, S.; Swift, S.; Michler, Peter; Jetter, Michael; Wilcox, K. G.
In: Electronics Letters, Vol. 53, No. 23, 13.11.2017, p. 1537-1539.Research output: Contribution to journal › Article
TY - JOUR
T1 - DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm
AU - Mirkhanov, Shamil
AU - Quarterman, A. H.
AU - Kahle, Hermann
AU - Bek, Roman
AU - Pecoroni, R.
AU - Smyth, C. J.C.
AU - Vollmer, S.
AU - Swift, S.
AU - Michler, Peter
AU - Jetter, Michael
AU - Wilcox, K. G.
N1 - The research leading to these results has received funding from the People Programme (Marie Curie Actions) of the European’s Seventh Framework Programme (FP7/2007-2013) under REA grant agreement no. 608133 and Scottish Funding Council (SFC) Horizon fund.
PY - 2017/11/13
Y1 - 2017/11/13
N2 - We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.
AB - We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.
U2 - 10.1049/el.2017.2689
DO - 10.1049/el.2017.2689
M3 - Article
VL - 53
SP - 1537
EP - 1539
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 23
ER -