DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

Shamil Mirkhanov (Lead / Corresponding author), A. H. Quarterman, Hermann Kahle, Roman Bek, R. Pecoroni, C. J.C. Smyth, S. Vollmer, S. Swift, Peter Michler, Michael Jetter, K. G. Wilcox

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Abstract

We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.

Original languageEnglish
Pages (from-to)1537-1539
Number of pages3
JournalElectronics Letters
Volume53
Issue number23
Early online date10 Oct 2017
DOIs
Publication statusPublished - 13 Nov 2017

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    Mirkhanov, S., Quarterman, A. H., Kahle, H., Bek, R., Pecoroni, R., Smyth, C. J. C., Vollmer, S., Swift, S., Michler, P., Jetter, M., & Wilcox, K. G. (2017). DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm. Electronics Letters, 53(23), 1537-1539. https://doi.org/10.1049/el.2017.2689