DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

TY - JOUR

T1 - DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

AU - Mirkhanov, Shamil

AU - Quarterman, A. H.

AU - Kahle, Hermann

AU - Bek, Roman

AU - Pecoroni, R.

AU - Smyth, C. J.C.

AU - Vollmer, S.

AU - Swift, S.

AU - Michler, Peter

AU - Jetter, Michael

AU - Wilcox, K. G.

N1 - The research leading to these results has received funding from the People Programme (Marie Curie Actions) of the European’s Seventh Framework Programme (FP7/2007-2013) under REA grant agreement no. 608133 and Scottish Funding Council (SFC) Horizon fund.

PY - 2017/11/13

Y1 - 2017/11/13

N2 - We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.

AB - We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.

U2 - 10.1049/el.2017.2689

DO - 10.1049/el.2017.2689

M3 - Article

AN - SCOPUS:85033718362

SN - 0013-5194

VL - 53

SP - 1537

EP - 1539

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -