Defect pool model based transient photoconductivity and the conduction band tail profile in a-Si:H

A. Merazga, A. F. Meftah, A. M. Meftah, C. Main, S. Reynolds

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    The energy profile of the density of states (DOS) over the mobility gap is determined jointly by the defect pool model (DPM) calculation and the Fourier transform of the transient photoconductivity (TPC), for intrinsic and phosphorus (P)-doped a-Si:H. From the Fourier transform of the TPC, we measure, as a doping effect, an increase of the DOS around the donor energy level, at about 0.16 eV below the conduction mobility edge, and a decrease of the tail width below this level from 21 to 15 meV. This disorder effect on the conduction band tail caused by the P dopant is consistent with the induced doping changes in the dangling bond defect distribution calculated by the DPM. TPC decays are then generated by numerical simulation using this DOS distribution and compared to experimental TPC data. All observed features in the transient photoresponse are reproduced by the simulation, namely the short time rapid decrease followed by the long power law decay in the intrinsic a-Si:H, and the long non-dispersive flat region in the P-doped a-Si:H.
    Original languageEnglish
    Pages (from-to)10969-10977
    Number of pages9
    JournalJournal of Physics: Condensed Matter
    Volume13
    Issue number48
    DOIs
    Publication statusPublished - 2001

    Fingerprint Dive into the research topics of 'Defect pool model based transient photoconductivity and the conduction band tail profile in a-Si:H'. Together they form a unique fingerprint.

  • Cite this