Density-of-states distribution in AlGaN obtained from transient photocurrent analysis

Keyphrases

• Density of States 100%
• Transient Photocurrent 100%
• State Distribution 100%
• Aluminum Gallium Nitride (AlGaN) 100%
• Localized States 50%
• Photocurrent 50%
• Multiple Trapping 50%
• Dark Conductivity 50%
• Photoconductivity Measurement 50%
• Temperature Range 50%
• Photoconductivity 50%
• Exponential Tail 50%
• Rapid Decay 50%
• Power-law Decay 50%
• Aluminum Concentration 50%
• AlxGa1-xN 50%
• High Aluminum 50%
• Thermal Activation 50%
• Current Transient 50%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• Pulsed Laser Excitation 50%
• Heterostructure Interface 50%
• Multiple Releases 50%
• Band Edge 50%
• Sapphire Substrate 50%

Engineering

• Transients 100%
• Photocurrent 100%
• Localized State 33%
• Temperature Range 33%
• Millisecond 33%
• Band Edge 33%
• Microsecond 33%
• Laser Excitation 33%
• Heterojunctions 33%
• Sapphire Substrate 33%
• Aluminum Concentration 33%
• Broad Peak 33%
• Pulsed Laser 33%

Physics

• Photoelectric Emission 100%
• Density of States 100%
• Transients 100%
• Photoconductivity 66%
• Pulsed Laser 33%
• Heterojunctions 33%