Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filaments

S. K. Persheyev, D. M. Goldie, R. A. G. Gibson, M. J. Rose, S. Anthony, D. J. Keeble, K. Robb, C. Main, S. Reynolds, I. Zrinscak

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    Infrared spectroscopic data are correlated here together with conductivity results, transient photoconductivity measurements and fundamental absorption data in an attempt to understand the physical processes involved in the growth of tungsten hot-wire deposited hydrogenated amorphous silicon. Film surface growth processes initially involve diffusing thermally dissociated radicals, with a subsequent additional contribution from evaporated silicon species. We show how changing processes at the heated wire surface, surrounded by silane gas, affect the electronic and structural properties of the hydrogenated amorphous silicon produced. Depth profiling by chemical etching reveals substantial variations in the level of contamination and in the electronic structure throughout the film.
    Original languageEnglish
    Pages (from-to)130-133
    Number of pages4
    JournalThin Solid Films
    Volume395
    Issue number1-2
    DOIs
    Publication statusPublished - 2001

    Fingerprint Dive into the research topics of 'Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filaments'. Together they form a unique fingerprint.

  • Cite this