Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity techniques

R. Bruggemann, C. Main, S. Reynolds

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    We probe near-surface regions in hydrogenated amorphous andmicrocrystalline
    silicon by recording the transient photocurrent after application of a green laser
    pulse with short absorption depth through the glass-substrate/silicon interface.
    Depending on the spatial defect inhomogeneity close to the illuminated
    surface the transient photocurrent shows a different decay behaviour under
    strongly absorbed green light as compared with more uniformly absorbed red
    illumination. We apply a Fourier transform technique to the photocurrent decay,
    which reveals spatial inhomogeneities in the deep-defect density in amorphous
    silicon. For a highly crystalline sample of microcrystalline silicon we find depth
    homogeneity in the electronic properties, in agreement with information from
    structural investigations.
    Original languageEnglish
    Pages (from-to)6909-6915
    Number of pages7
    JournalJournal of Physics: Condensed Matter
    Volume14
    Issue number28
    DOIs
    Publication statusPublished - 22 Jul 2002

    Fingerprint Dive into the research topics of 'Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity techniques'. Together they form a unique fingerprint.

    Cite this