Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity techniques

R. Bruggemann; C. Main; S. Reynolds

doi:10.1088/0953-8984/14/28/302

Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity techniques

R. Bruggemann
, C. Main
, S. Reynolds

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We probe near-surface regions in hydrogenated amorphous andmicrocrystalline
silicon by recording the transient photocurrent after application of a green laser
pulse with short absorption depth through the glass-substrate/silicon interface.
Depending on the spatial defect inhomogeneity close to the illuminated
surface the transient photocurrent shows a different decay behaviour under
strongly absorbed green light as compared with more uniformly absorbed red
illumination. We apply a Fourier transform technique to the photocurrent decay,
which reveals spatial inhomogeneities in the deep-defect density in amorphous
silicon. For a highly crystalline sample of microcrystalline silicon we find depth
homogeneity in the electronic properties, in agreement with information from
structural investigations.

Original language	English
Pages (from-to)	6909-6915
Number of pages	7
Journal	Journal of Physics: Condensed Matter
Volume	14
Issue number	28
DOIs	https://doi.org/10.1088/0953-8984/14/28/302
Publication status	Published - 22 Jul 2002

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Brueggemann et al JPCM 14 2002 6909
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title = "Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity techniques",

abstract = "We probe near-surface regions in hydrogenated amorphous andmicrocrystalline silicon by recording the transient photocurrent after application of a green laser pulse with short absorption depth through the glass-substrate/silicon interface. Depending on the spatial defect inhomogeneity close to the illuminated surface the transient photocurrent shows a different decay behaviour under strongly absorbed green light as compared with more uniformly absorbed red illumination. We apply a Fourier transform technique to the photocurrent decay, which reveals spatial inhomogeneities in the deep-defect density in amorphous silicon. For a highly crystalline sample of microcrystalline silicon we find depth homogeneity in the electronic properties, in agreement with information from structural investigations.",

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AU - Bruggemann, R.

AU - Main, C.

AU - Reynolds, S.

PY - 2002/7/22

Y1 - 2002/7/22

N2 - We probe near-surface regions in hydrogenated amorphous andmicrocrystalline silicon by recording the transient photocurrent after application of a green laser pulse with short absorption depth through the glass-substrate/silicon interface. Depending on the spatial defect inhomogeneity close to the illuminated surface the transient photocurrent shows a different decay behaviour under strongly absorbed green light as compared with more uniformly absorbed red illumination. We apply a Fourier transform technique to the photocurrent decay, which reveals spatial inhomogeneities in the deep-defect density in amorphous silicon. For a highly crystalline sample of microcrystalline silicon we find depth homogeneity in the electronic properties, in agreement with information from structural investigations.

AB - We probe near-surface regions in hydrogenated amorphous andmicrocrystalline silicon by recording the transient photocurrent after application of a green laser pulse with short absorption depth through the glass-substrate/silicon interface. Depending on the spatial defect inhomogeneity close to the illuminated surface the transient photocurrent shows a different decay behaviour under strongly absorbed green light as compared with more uniformly absorbed red illumination. We apply a Fourier transform technique to the photocurrent decay, which reveals spatial inhomogeneities in the deep-defect density in amorphous silicon. For a highly crystalline sample of microcrystalline silicon we find depth homogeneity in the electronic properties, in agreement with information from structural investigations.

U2 - 10.1088/0953-8984/14/28/302

DO - 10.1088/0953-8984/14/28/302

M3 - Article

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VL - 14

SP - 6909

EP - 6915

JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

IS - 28

ER -

Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity techniques

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