Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m

A. A. Lagatsky, V. E. Kisel, A. E. Troshin, N. A. Tolstik, N. V. Kuleshov, N. I. Leonyuk, A. E. Zhukov, E. U. Rafailov, W. Sibbett

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    33 Citations (Scopus)

    Abstract

    We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)(4) laser operating in the 1.5-1.6 mu m spectral region. Low-loss GaInNAs quantumwell semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps. (c) 2007 Optical Society of America.

    Original languageEnglish
    Pages (from-to)83-85
    Number of pages3
    JournalOptics Letters
    Volume33
    Issue number1
    DOIs
    Publication statusPublished - 1 Jan 2008

    Keywords

    • SEMICONDUCTOR SATURABLE ABSORBER
    • SOLID-STATE LASERS
    • GLASS-LASER
    • YB
    • CRYSTALS
    • MIRROR
    • GROWTH

    Cite this

    Lagatsky, A. A., Kisel, V. E., Troshin, A. E., Tolstik, N. A., Kuleshov, N. V., Leonyuk, N. I., Zhukov, A. E., Rafailov, E. U., & Sibbett, W. (2008). Diode-pumped passively mode-locked Er, Yb : YAl3(BO3)(4) laser at 1.5-1.6 mu m. Optics Letters, 33(1), 83-85. https://doi.org/10.1364/OL.33.000083