Diode-pumped passively Q-switched Yb:KGW laser with V:YAG saturable absorber

A. A. Lagatsky (Lead / Corresponding author), A. Abdolvand, N. V. Kuleshov

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The use of V:YAG laser crystals for passive switching of diode-pumped Yb:KGW lasers was discussed. The laser emission at two wavelengths was obtained by Raman conversion of fundamental laser emission in the laser crystal. A hemispherical laser cavity of a Yb:KGW crystal chip was employed for the laser experiments. Raman conversion of the fundamental emission in the laser crystal was observed in the Q-switch mode.

    Original languageEnglish
    Title of host publicationConference Digest
    Subtitle of host publication2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505)
    PublisherIEEE
    Number of pages1
    ISBN (Print)9780780363191
    DOIs
    Publication statusPublished - 6 Aug 2002
    Event2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France
    Duration: 10 Sept 200015 Sept 2000

    Conference

    Conference2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
    CityNice, France
    Period10/09/0015/09/00

    Keywords

    • Diodes
    • Pump lasers
    • Laser excitation
    • Fiber lasers
    • Space vector pulse width modulation
    • Laser modes
    • Laser beams
    • Optical pulses
    • Power lasers
    • Power generation

    ASJC Scopus subject areas

    • Control and Systems Engineering
    • Electrical and Electronic Engineering

    Fingerprint

    Dive into the research topics of 'Diode-pumped passively Q-switched Yb:KGW laser with V:YAG saturable absorber'. Together they form a unique fingerprint.

    Cite this