Abstract
The use of V:YAG laser crystals for passive switching of diode-pumped Yb:KGW lasers was discussed. The laser emission at two wavelengths was obtained by Raman conversion of fundamental laser emission in the laser crystal. A hemispherical laser cavity of a Yb:KGW crystal chip was employed for the laser experiments. Raman conversion of the fundamental emission in the laser crystal was observed in the Q-switch mode.
| Original language | English |
|---|---|
| Title of host publication | Conference Digest |
| Subtitle of host publication | 2000 Conference on Lasers and Electro-Optics Europe (Cat. No.00TH8505) |
| Publisher | IEEE |
| Number of pages | 1 |
| ISBN (Print) | 9780780363191 |
| DOIs | |
| Publication status | Published - 6 Aug 2002 |
| Event | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: 10 Sept 2000 → 15 Sept 2000 |
Conference
| Conference | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) |
|---|---|
| City | Nice, France |
| Period | 10/09/00 → 15/09/00 |
Keywords
- Diodes
- Pump lasers
- Laser excitation
- Fiber lasers
- Space vector pulse width modulation
- Laser modes
- Laser beams
- Optical pulses
- Power lasers
- Power generation
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
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