Effect of copper on the carrier lifetime in black silicon

Henrik P. Porte, Dmitry Turchinovich, Saydulla Persheyev, Yongchang Fan, Mervyn J. Rose, Peter Uhd Jepsen

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    Abstract

    Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.

    Original languageEnglish
    Pages (from-to)883-886
    Number of pages4
    JournalJournal of Infrared, Millimeter and Terahertz Waves
    Volume32
    Issue number7
    DOIs
    Publication statusPublished - Jul 2011

    Keywords

    • TERAHERTZ
    • CRYSTALS

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