Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.
|Number of pages||4|
|Journal||Journal of Infrared, Millimeter and Terahertz Waves|
|Publication status||Published - Jul 2011|