Abstract
Black silicon is produced by laser annealing of a-Si:H films. During annealing, silicon microstructures are formed on the surface. We use time-resolved terahertz spectroscopy to study the photoconductivity dynamics in black silicon. We find that when a copper film is deposited on top of the a-Si:H layer prior to laser annealing, the carrier lifetime of black silicon is significantly reduced.
Original language | English |
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Pages (from-to) | 883-886 |
Number of pages | 4 |
Journal | Journal of Infrared, Millimeter and Terahertz Waves |
Volume | 32 |
Issue number | 7 |
DOIs | |
Publication status | Published - Jul 2011 |
Keywords
- TERAHERTZ
- CRYSTALS