Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer

N. S. Daghestani, G. S. Sokolovskii, N. E. Bazieva, A. V. Tolmatchev, E. U. Rafailov

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    In this paper we propose a novel type of multiple-layer photomixer based on amorphous/nano-crystalline-Si. Such a device implies that it could be possible to enhance the conversion efficiency from optical power to THz emission by increasing the absorption length and by reducing the device overheating through the use of substrates with higher thermal conductivity compared to GaAs. Our calculations show that the output power from a two-layer Si-based photomixer is at least ten times higher than that from conventional LT-GaAs photomixers at 1 THz.

    Original languageEnglish
    Article number095025
    Pages (from-to)-
    Number of pages5
    JournalSemiconductor Science and Technology
    Volume24
    Issue number9
    DOIs
    Publication statusPublished - Sep 2009

    Keywords

    • TEMPERATURE-GROWN GAAS
    • GENERATION

    Cite this

    Daghestani, N. S., Sokolovskii, G. S., Bazieva, N. E., Tolmatchev, A. V., & Rafailov, E. U. (2009). Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer. Semiconductor Science and Technology, 24(9), -. [095025]. https://doi.org/10.1088/0268-1242/24/9/095025