Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer

N. S. Daghestani; G. S. Sokolovskii; N. E. Bazieva; A. V. Tolmatchev; E. U. Rafailov

doi:10.1088/0268-1242/24/9/095025

Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer

N. S. Daghestani, G. S. Sokolovskii, N. E. Bazieva, A. V. Tolmatchev, E. U. Rafailov

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7 Citations (Scopus)

Abstract

In this paper we propose a novel type of multiple-layer photomixer based on amorphous/nano-crystalline-Si. Such a device implies that it could be possible to enhance the conversion efficiency from optical power to THz emission by increasing the absorption length and by reducing the device overheating through the use of substrates with higher thermal conductivity compared to GaAs. Our calculations show that the output power from a two-layer Si-based photomixer is at least ten times higher than that from conventional LT-GaAs photomixers at 1 THz.

Original language	English
Article number	095025
Pages (from-to)	-
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	24
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/24/9/095025
Publication status	Published - Sept 2009

Keywords

TEMPERATURE-GROWN GAAS
GENERATION

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title = "Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer",

abstract = "In this paper we propose a novel type of multiple-layer photomixer based on amorphous/nano-crystalline-Si. Such a device implies that it could be possible to enhance the conversion efficiency from optical power to THz emission by increasing the absorption length and by reducing the device overheating through the use of substrates with higher thermal conductivity compared to GaAs. Our calculations show that the output power from a two-layer Si-based photomixer is at least ten times higher than that from conventional LT-GaAs photomixers at 1 THz.",

keywords = "TEMPERATURE-GROWN GAAS, GENERATION",

author = "Daghestani, {N. S.} and Sokolovskii, {G. S.} and Bazieva, {N. E.} and Tolmatchev, {A. V.} and Rafailov, {E. U.}",

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AU - Daghestani, N. S.

AU - Sokolovskii, G. S.

AU - Bazieva, N. E.

AU - Tolmatchev, A. V.

AU - Rafailov, E. U.

PY - 2009/9

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N2 - In this paper we propose a novel type of multiple-layer photomixer based on amorphous/nano-crystalline-Si. Such a device implies that it could be possible to enhance the conversion efficiency from optical power to THz emission by increasing the absorption length and by reducing the device overheating through the use of substrates with higher thermal conductivity compared to GaAs. Our calculations show that the output power from a two-layer Si-based photomixer is at least ten times higher than that from conventional LT-GaAs photomixers at 1 THz.

AB - In this paper we propose a novel type of multiple-layer photomixer based on amorphous/nano-crystalline-Si. Such a device implies that it could be possible to enhance the conversion efficiency from optical power to THz emission by increasing the absorption length and by reducing the device overheating through the use of substrates with higher thermal conductivity compared to GaAs. Our calculations show that the output power from a two-layer Si-based photomixer is at least ten times higher than that from conventional LT-GaAs photomixers at 1 THz.

KW - TEMPERATURE-GROWN GAAS

KW - GENERATION

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DO - 10.1088/0268-1242/24/9/095025

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JF - Semiconductor Science and Technology

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Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer

Abstract

Keywords

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