Electrical effects of corner Serif OPC

M. McCallum, J. T. M. Stevenson, A. J. Walton, A. Tsiamis, S. Smith, A. C. Hourd

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Today's Optical Proximity Correction (OPC) is becoming increasingly complex and necessitates that we use smaller and smaller grid sizes to produce the fine patterns required. These small grids lead to significant overhead in data handling and, more importantly, for the tools that will write and inspect the mask, together making the mask extremely expensive. For two dimensional structures, such as corners, we have very complex structures using either additive or subtractive OPC features to produce the desired shape. However, it is unclear whether these structures need to be so perfect for the electrical task they are intended to perform. In previous work we have created a number of corner type electrical test structures and applied varying degrees of OPC to both the outer and inner corners of the structures, then printed these on doped polysilicon and the electrical effect of the OPC was investigated. This work showed that the electrical effect of OPC on the outer corner was minimal, whereas the inner corner shape had a marked influence upon the electrical resistance of the circuit feature. However, technology continues to move forward and polysilicon gates are being replaced by metal gates for 32nm node. Therefore, in this work we replace the polysilicon with a metal and investigate the size and position of OPC applied to both the outer and inner corners of the structures. The data obtained using the metal structures suggests that as was the case when using polysilicon, OPC on the outside corner has little impact upon a simple circuit's performance, while care should be taken with OPC on the inner corners, particularly with regard to the size of the OPC serifs used.
    Original languageEnglish
    Title of host publicationMetrology, Inspection, and Process Control for Microlithography XXIV
    EditorsChristopher J. Raymond
    Place of PublicationBellingham
    PublisherSPIE-International Society for Optical Engineering
    ISBN (Print)9780819480521
    DOIs
    Publication statusPublished - 2010
    EventSPIE Advanced Lithography 2010: Metrology, Inspection, and Process Control for Microlithography XXIV - San Jose Convention Center, San Diego, United States
    Duration: 21 Feb 201025 Feb 2010
    http://spie.org/x39509.xml

    Publication series

    NameProceedings of SPIE
    PublisherSPIE
    Volume7638

    Conference

    ConferenceSPIE Advanced Lithography 2010: Metrology, Inspection, and Process Control for Microlithography XXIV
    CountryUnited States
    CitySan Diego
    Period21/02/1025/02/10
    Internet address

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