Electron-beam interactions in Cu-GeSe2 amorphous thin films

Jason Romero, Sandy Fitzgerald

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    Copper migration and surface expansion of irradiated areas are observed in amorphous germanium-based chalcogenide thin films when an electron beam is focused in pulsed or continuous operation on the surface of these thin films. Both phenomena can be explained using a simple model in which the population of D- centers is considered to increase upon electron irradiation. The increase in the D- center population is envisaged as due to the breaking of bonds by the electron radiation and by the constant presence of negative charge in irradiated regions. Changes in copper concentration of 20%–30% and surface expansions of 30%–40% of films thickness have been obtained. © 2003 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)4517-4520
    Number of pages4
    JournalJournal of Applied Physics
    Volume93
    Issue number8
    DOIs
    Publication statusPublished - Apr 2003

    Fingerprint

    beam interactions
    electron beams
    thin films
    electron radiation
    copper
    expansion
    electron irradiation
    germanium
    film thickness
    physics

    Keywords

    • Copper compounds
    • Germanium compounds
    • Ternary semiconductors
    • Diffusion
    • Semiconductor thin films
    • Chalcogenide glasses
    • Electron-surface impact

    Cite this

    Romero, Jason ; Fitzgerald, Sandy. / Electron-beam interactions in Cu-GeSe2 amorphous thin films. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 8. pp. 4517-4520.
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    abstract = "Copper migration and surface expansion of irradiated areas are observed in amorphous germanium-based chalcogenide thin films when an electron beam is focused in pulsed or continuous operation on the surface of these thin films. Both phenomena can be explained using a simple model in which the population of D- centers is considered to increase upon electron irradiation. The increase in the D- center population is envisaged as due to the breaking of bonds by the electron radiation and by the constant presence of negative charge in irradiated regions. Changes in copper concentration of 20{\%}–30{\%} and surface expansions of 30{\%}–40{\%} of films thickness have been obtained. {\circledC} 2003 American Institute of Physics.",
    keywords = "Copper compounds, Germanium compounds, Ternary semiconductors, Diffusion, Semiconductor thin films, Chalcogenide glasses, Electron-surface impact",
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    Electron-beam interactions in Cu-GeSe2 amorphous thin films. / Romero, Jason; Fitzgerald, Sandy.

    In: Journal of Applied Physics, Vol. 93, No. 8, 04.2003, p. 4517-4520.

    Research output: Contribution to journalArticle

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    T1 - Electron-beam interactions in Cu-GeSe2 amorphous thin films

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    AU - Fitzgerald, Sandy

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    PY - 2003/4

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    KW - Copper compounds

    KW - Germanium compounds

    KW - Ternary semiconductors

    KW - Diffusion

    KW - Semiconductor thin films

    KW - Chalcogenide glasses

    KW - Electron-surface impact

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