Electron field emission from excimer laser crystallized amorphous silicon

Y. F. Tang; S. R. P. Silva; B. O. Boskovic; J. M. Shannon; M. J. Rose

doi:10.1063/1.1482141

Electron field emission from excimer laser crystallized amorphous silicon

Y. F. Tang, S. R. P. Silva, B. O. Boskovic, J. M. Shannon, M. J. Rose

Research output: Contribution to journal › Article › peer-review

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Abstract

NOTE: THE MATHEMATICAL SYMBOLS/SPECIAL CHARACTERS IN THIS ABSTRACT CANNOT BE DISPLAYED CORRECTLY ON THIS PAGE. PLEASE REFER TO THE ABSTRACT IN THE PUBLISHER’S WEBSITE FOR AN ACCURATE DISPLAY We show field emission from excimer laser crystallized (ELC) hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 10–5 A (current densities0.04 A/cm2) at threshold fields less than 15 V/µm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged. © 2002 American Institute of Physics.

Original language	English
Pages (from-to)	4154-4156
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	22
DOIs	https://doi.org/10.1063/1.1482141
Publication status	Published - Jun 2002

Keywords

Elemental semiconductors
Electron field emission
Amorphous semiconductors
Laser materials processing

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10.1063/1.1482141

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@article{97c1a437ab31490da6cc13ce78aca637,

title = "Electron field emission from excimer laser crystallized amorphous silicon",

abstract = "NOTE: THE MATHEMATICAL SYMBOLS/SPECIAL CHARACTERS IN THIS ABSTRACT CANNOT BE DISPLAYED CORRECTLY ON THIS PAGE. PLEASE REFER TO THE ABSTRACT IN THE PUBLISHER{\textquoteright}S WEBSITE FOR AN ACCURATE DISPLAY We show field emission from excimer laser crystallized (ELC) hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 10–5 A (current densities0.04 A/cm2) at threshold fields less than 15 V/µm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged. {\textcopyright} 2002 American Institute of Physics.",

keywords = "Elemental semiconductors, Electron field emission, Amorphous semiconductors, Laser materials processing",

author = "Tang, {Y. F.} and Silva, {S. R. P.} and Boskovic, {B. O.} and Shannon, {J. M.} and Rose, {M. J.}",

note = "dc.publisher: American Institute of Physics ",

year = "2002",

month = jun,

doi = "10.1063/1.1482141",

language = "English",

volume = "80",

pages = "4154--4156",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Electron field emission from excimer laser crystallized amorphous silicon

AU - Tang, Y. F.

AU - Silva, S. R. P.

AU - Boskovic, B. O.

AU - Shannon, J. M.

AU - Rose, M. J.

N1 - dc.publisher: American Institute of Physics

PY - 2002/6

Y1 - 2002/6

N2 - NOTE: THE MATHEMATICAL SYMBOLS/SPECIAL CHARACTERS IN THIS ABSTRACT CANNOT BE DISPLAYED CORRECTLY ON THIS PAGE. PLEASE REFER TO THE ABSTRACT IN THE PUBLISHER’S WEBSITE FOR AN ACCURATE DISPLAY We show field emission from excimer laser crystallized (ELC) hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 10–5 A (current densities0.04 A/cm2) at threshold fields less than 15 V/µm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged. © 2002 American Institute of Physics.

AB - NOTE: THE MATHEMATICAL SYMBOLS/SPECIAL CHARACTERS IN THIS ABSTRACT CANNOT BE DISPLAYED CORRECTLY ON THIS PAGE. PLEASE REFER TO THE ABSTRACT IN THE PUBLISHER’S WEBSITE FOR AN ACCURATE DISPLAY We show field emission from excimer laser crystallized (ELC) hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 10–5 A (current densities0.04 A/cm2) at threshold fields less than 15 V/µm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged. © 2002 American Institute of Physics.

KW - Elemental semiconductors

KW - Electron field emission

KW - Amorphous semiconductors

KW - Laser materials processing

U2 - 10.1063/1.1482141

DO - 10.1063/1.1482141

M3 - Article

SN - 1077-3118

VL - 80

SP - 4154

EP - 4156

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Electron field emission from excimer laser crystallized amorphous silicon

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Keywords

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