Electron field emission from excimer laser crystallized amorphous silicon

Y. F. Tang, S. R. P. Silva, B. O. Boskovic, J. M. Shannon, M. J. Rose

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    34 Citations (Scopus)

    Abstract

    NOTE: THE MATHEMATICAL SYMBOLS/SPECIAL CHARACTERS IN THIS ABSTRACT CANNOT BE DISPLAYED CORRECTLY ON THIS PAGE. PLEASE REFER TO THE ABSTRACT IN THE PUBLISHER’S WEBSITE FOR AN ACCURATE DISPLAY We show field emission from excimer laser crystallized (ELC) hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 10–5 A (current densities0.04 A/cm2) at threshold fields less than 15 V/µm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged. © 2002 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)4154-4156
    Number of pages3
    JournalApplied Physics Letters
    Volume80
    Issue number22
    DOIs
    Publication statusPublished - Jun 2002

    Keywords

    • Elemental semiconductors
    • Electron field emission
    • Amorphous semiconductors
    • Laser materials processing

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