Electron irradiation induced expansion in amorphous chalcogenide films

J. S. Romero, Sandy Fitzgerald, Katrin Mietzsch

    Research output: Contribution to journalArticlepeer-review

    18 Citations (Scopus)

    Abstract

    An expansion of the film surface is observed in amorphous germanium based chalcogenide films when an electron beam is focused in pulsed or fixed mode on the film surface. For thin films of 0.1–1 µm thick the expansion extends laterally over a range of 0.5–1.5 µm and the vertical expansion extends from 0.1–0.6 µm. Increasing the current density of the probe results in an increase in the thickness and a decrease in the width of these features. This phenomenon can be explained in terms of theoretical electrostatics. © 2002 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)9572-9574
    Number of pages3
    JournalJournal of Applied Physics
    Volume91
    Issue number12
    DOIs
    Publication statusPublished - Jun 2002

    Keywords

    • Germanium compounds
    • Chalcogenide glasses
    • Semiconductor thin films
    • Electron beam effects

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