Electronic properties of undoped microcrystalline silicon oxide films

The electronic properties of undoped microcrystalline silicon oxide films have been investigated by transient photocurrent (TPC) density of states (DOS) spectroscopy, supported by dark conductivity, steady-state photoconductivity, and constant-photocurrent measurements (CPM). Film compositions span the range from amorphous to microcrystalline and contain up to 10% oxygen content, yielding optical bandgap values E₀₄ (the photon energy at which the absorption depth equals one micrometre) between 1.85 and 2.11 eV. Carrier transport is consistent with multiple-trapping in a localised DOS, which depends upon film structure and oxygen content. TPC measurements indicate that both conduction band-tail energy and deep defect density increase with increasing oxygen content, accompanied by a reduction in majority carrier mobility-lifetime product. CPM measurements on amorphous films show a broadening of the Urbach tail with increasing oxygen content. Significantly higher oxygen incorporation without seriously compromising electronic quality appears possible in microcrystalline films. This suggests potential application as solar cell absorber layers offering increased optical bandgap and open-circuit voltage.