Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor

TY - JOUR

T1 - Ellipsometric characterization of amorphous and polycrystalline silicon films deposited using a single wafer reactor

AU - Borghesi, A.

AU - Giardini, M. E.

AU - Marazzi, M.

AU - Sassella, A.

AU - De Santi, G.

PY - 1997/2/17

Y1 - 1997/2/17

N2 - The optical functions of amorphous and polycrystalline silicon thin films deposited on single oxidized silicon substrates by chemical vapor deposition in a wide range of deposition temperatures have been determined using spectroscopic ellipsometry. The data analysis is performed by direct inversion of the experimental spectra, therefore, obtaining results independent of any film modeling. The optical results indicate that the film structure changes as the deposition temperature increases from amorphous to polycrystalline with different grain size and distribution.

AB - The optical functions of amorphous and polycrystalline silicon thin films deposited on single oxidized silicon substrates by chemical vapor deposition in a wide range of deposition temperatures have been determined using spectroscopic ellipsometry. The data analysis is performed by direct inversion of the experimental spectra, therefore, obtaining results independent of any film modeling. The optical results indicate that the film structure changes as the deposition temperature increases from amorphous to polycrystalline with different grain size and distribution.

UR - https://www.scopus.com/pages/publications/0001631863

U2 - 10.1063/1.118306

DO - 10.1063/1.118306

M3 - Article

AN - SCOPUS:0001631863

SN - 0003-6951

VL - 70

SP - 892

EP - 894

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -