Excimer laser microstructuring of amorphous silicon films for electron field emission applications

Y. Fan, M.J. Rose, S.K. Persheyev, M.Z. Shaikh

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline silicon features can be fabricated on the thin film surfaces. The electron field emission measurement results show that this kind of laser processed a-Si:H films possess good field emission characteristics with a low turn on electric field of less than 15 V/mu m and a larger saturation emission current. The diode configured field emission display devices have been demonstrated by using the laser irradiated a-Si:H films as the electron cold cathode emitters.

    Original languageEnglish
    Title of host publicationInternational Symposium on Photonics and Optoelectronics (SOPO 2009)
    Place of PublicationNEW YORK
    PublisherIEEE Computer Society
    Pages150-153
    Number of pages4
    ISBN (Print)9781424444113
    DOIs
    Publication statusPublished - 2009
    EventInternational Symposium on Photonics and Optoelectronics - Wuhan, China
    Duration: 14 Aug 200916 Aug 2009

    Conference

    ConferenceInternational Symposium on Photonics and Optoelectronics
    Abbreviated titleSOPO 2009
    CountryChina
    CityWuhan
    Period14/08/0916/08/09

    Keywords

    • hydrogenated amorphous silicon films
    • excimer laser microstructuring
    • electron field emission

    Cite this

    Fan, Y., Rose, M. J., Persheyev, S. K., & Shaikh, M. Z. (2009). Excimer laser microstructuring of amorphous silicon films for electron field emission applications. In International Symposium on Photonics and Optoelectronics (SOPO 2009) (pp. 150-153). NEW YORK: IEEE Computer Society. https://doi.org/10.1109/SOPO.2009.5230293
    Fan, Y. ; Rose, M.J. ; Persheyev, S.K. ; Shaikh, M.Z. / Excimer laser microstructuring of amorphous silicon films for electron field emission applications. International Symposium on Photonics and Optoelectronics (SOPO 2009). NEW YORK : IEEE Computer Society, 2009. pp. 150-153
    @inproceedings{7cc167b925f5471fb42fcb3039d8d845,
    title = "Excimer laser microstructuring of amorphous silicon films for electron field emission applications",
    abstract = "The hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline silicon features can be fabricated on the thin film surfaces. The electron field emission measurement results show that this kind of laser processed a-Si:H films possess good field emission characteristics with a low turn on electric field of less than 15 V/mu m and a larger saturation emission current. The diode configured field emission display devices have been demonstrated by using the laser irradiated a-Si:H films as the electron cold cathode emitters.",
    keywords = "hydrogenated amorphous silicon films, excimer laser microstructuring, electron field emission",
    author = "Y. Fan and M.J. Rose and S.K. Persheyev and M.Z. Shaikh",
    year = "2009",
    doi = "10.1109/SOPO.2009.5230293",
    language = "English",
    isbn = "9781424444113",
    pages = "150--153",
    booktitle = "International Symposium on Photonics and Optoelectronics (SOPO 2009)",
    publisher = "IEEE Computer Society",

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    Fan, Y, Rose, MJ, Persheyev, SK & Shaikh, MZ 2009, Excimer laser microstructuring of amorphous silicon films for electron field emission applications. in International Symposium on Photonics and Optoelectronics (SOPO 2009). IEEE Computer Society, NEW YORK, pp. 150-153, International Symposium on Photonics and Optoelectronics, Wuhan, China, 14/08/09. https://doi.org/10.1109/SOPO.2009.5230293

    Excimer laser microstructuring of amorphous silicon films for electron field emission applications. / Fan, Y.; Rose, M.J.; Persheyev, S.K.; Shaikh, M.Z.

    International Symposium on Photonics and Optoelectronics (SOPO 2009). NEW YORK : IEEE Computer Society, 2009. p. 150-153.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    TY - GEN

    T1 - Excimer laser microstructuring of amorphous silicon films for electron field emission applications

    AU - Fan, Y.

    AU - Rose, M.J.

    AU - Persheyev, S.K.

    AU - Shaikh, M.Z.

    PY - 2009

    Y1 - 2009

    N2 - The hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline silicon features can be fabricated on the thin film surfaces. The electron field emission measurement results show that this kind of laser processed a-Si:H films possess good field emission characteristics with a low turn on electric field of less than 15 V/mu m and a larger saturation emission current. The diode configured field emission display devices have been demonstrated by using the laser irradiated a-Si:H films as the electron cold cathode emitters.

    AB - The hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline silicon features can be fabricated on the thin film surfaces. The electron field emission measurement results show that this kind of laser processed a-Si:H films possess good field emission characteristics with a low turn on electric field of less than 15 V/mu m and a larger saturation emission current. The diode configured field emission display devices have been demonstrated by using the laser irradiated a-Si:H films as the electron cold cathode emitters.

    KW - hydrogenated amorphous silicon films

    KW - excimer laser microstructuring

    KW - electron field emission

    U2 - 10.1109/SOPO.2009.5230293

    DO - 10.1109/SOPO.2009.5230293

    M3 - Conference contribution

    SN - 9781424444113

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    EP - 153

    BT - International Symposium on Photonics and Optoelectronics (SOPO 2009)

    PB - IEEE Computer Society

    CY - NEW YORK

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    Fan Y, Rose MJ, Persheyev SK, Shaikh MZ. Excimer laser microstructuring of amorphous silicon films for electron field emission applications. In International Symposium on Photonics and Optoelectronics (SOPO 2009). NEW YORK: IEEE Computer Society. 2009. p. 150-153 https://doi.org/10.1109/SOPO.2009.5230293