Excimer laser microstructuring of amorphous silicon films for electron field emission applications

Y. Fan; M.J. Rose; S.K. Persheyev; M.Z. Shaikh

doi:10.1109/SOPO.2009.5230293

Excimer laser microstructuring of amorphous silicon films for electron field emission applications

Y. Fan, M.J. Rose, S.K. Persheyev, M.Z. Shaikh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline silicon features can be fabricated on the thin film surfaces. The electron field emission measurement results show that this kind of laser processed a-Si:H films possess good field emission characteristics with a low turn on electric field of less than 15 V/mu m and a larger saturation emission current. The diode configured field emission display devices have been demonstrated by using the laser irradiated a-Si:H films as the electron cold cathode emitters.

Original language	English
Title of host publication	International Symposium on Photonics and Optoelectronics (SOPO 2009)
Place of Publication	NEW YORK
Publisher	IEEE Computer Society
Pages	150-153
Number of pages	4
ISBN (Print)	9781424444113
DOIs	https://doi.org/10.1109/SOPO.2009.5230293
Publication status	Published - 2009
Event	International Symposium on Photonics and Optoelectronics - Wuhan, China Duration: 14 Aug 2009 → 16 Aug 2009

Conference

Conference	International Symposium on Photonics and Optoelectronics
Abbreviated title	SOPO 2009
Country/Territory	China
City	Wuhan
Period	14/08/09 → 16/08/09

Keywords

hydrogenated amorphous silicon films
excimer laser microstructuring
electron field emission

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10.1109/SOPO.2009.5230293

Cite this

@inproceedings{7cc167b925f5471fb42fcb3039d8d845,

title = "Excimer laser microstructuring of amorphous silicon films for electron field emission applications",

abstract = "The hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline silicon features can be fabricated on the thin film surfaces. The electron field emission measurement results show that this kind of laser processed a-Si:H films possess good field emission characteristics with a low turn on electric field of less than 15 V/mu m and a larger saturation emission current. The diode configured field emission display devices have been demonstrated by using the laser irradiated a-Si:H films as the electron cold cathode emitters.",

keywords = "hydrogenated amorphous silicon films, excimer laser microstructuring, electron field emission",

author = "Y. Fan and M.J. Rose and S.K. Persheyev and M.Z. Shaikh",

year = "2009",

doi = "10.1109/SOPO.2009.5230293",

language = "English",

isbn = "9781424444113",

pages = "150--153",

booktitle = "International Symposium on Photonics and Optoelectronics (SOPO 2009)",

publisher = "IEEE Computer Society",

note = "International Symposium on Photonics and Optoelectronics, SOPO 2009 ; Conference date: 14-08-2009 Through 16-08-2009",

}

Fan, Y, Rose, MJ, Persheyev, SK & Shaikh, MZ 2009, Excimer laser microstructuring of amorphous silicon films for electron field emission applications. in International Symposium on Photonics and Optoelectronics (SOPO 2009). IEEE Computer Society, NEW YORK, pp. 150-153, International Symposium on Photonics and Optoelectronics, Wuhan, China, 14/08/09. https://doi.org/10.1109/SOPO.2009.5230293

TY - GEN

T1 - Excimer laser microstructuring of amorphous silicon films for electron field emission applications

AU - Fan, Y.

AU - Rose, M.J.

AU - Persheyev, S.K.

AU - Shaikh, M.Z.

PY - 2009

Y1 - 2009

N2 - The hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline silicon features can be fabricated on the thin film surfaces. The electron field emission measurement results show that this kind of laser processed a-Si:H films possess good field emission characteristics with a low turn on electric field of less than 15 V/mu m and a larger saturation emission current. The diode configured field emission display devices have been demonstrated by using the laser irradiated a-Si:H films as the electron cold cathode emitters.

AB - The hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline silicon features can be fabricated on the thin film surfaces. The electron field emission measurement results show that this kind of laser processed a-Si:H films possess good field emission characteristics with a low turn on electric field of less than 15 V/mu m and a larger saturation emission current. The diode configured field emission display devices have been demonstrated by using the laser irradiated a-Si:H films as the electron cold cathode emitters.

KW - hydrogenated amorphous silicon films

KW - excimer laser microstructuring

KW - electron field emission

U2 - 10.1109/SOPO.2009.5230293

DO - 10.1109/SOPO.2009.5230293

M3 - Conference contribution

SN - 9781424444113

SP - 150

EP - 153

BT - International Symposium on Photonics and Optoelectronics (SOPO 2009)

PB - IEEE Computer Society

CY - NEW YORK

T2 - International Symposium on Photonics and Optoelectronics

Y2 - 14 August 2009 through 16 August 2009

ER -

Excimer laser microstructuring of amorphous silicon films for electron field emission applications

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Keywords

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