Excimer laser microstructuring of amorphous silicon films for electron field emission applications

Y. Fan, M.J. Rose, S.K. Persheyev, M.Z. Shaikh

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)


    The hydrogenated amorphous silicon (a-Si:H) films on molybdenum coated glass substrates were microstructured by irradiating the films using KrF excimer laser with a slope beam profile. By varying the laser processing parameters i.e., the laser pulse energy, the number of laser pulses and the laser energy distribution along the sample scan directions, the homogeneous, high density, and conical polycrystalline silicon features can be fabricated on the thin film surfaces. The electron field emission measurement results show that this kind of laser processed a-Si:H films possess good field emission characteristics with a low turn on electric field of less than 15 V/mu m and a larger saturation emission current. The diode configured field emission display devices have been demonstrated by using the laser irradiated a-Si:H films as the electron cold cathode emitters.

    Original languageEnglish
    Title of host publicationInternational Symposium on Photonics and Optoelectronics (SOPO 2009)
    Place of PublicationNEW YORK
    PublisherIEEE Computer Society
    Number of pages4
    ISBN (Print)9781424444113
    Publication statusPublished - 2009
    EventInternational Symposium on Photonics and Optoelectronics - Wuhan, China
    Duration: 14 Aug 200916 Aug 2009


    ConferenceInternational Symposium on Photonics and Optoelectronics
    Abbreviated titleSOPO 2009


    • hydrogenated amorphous silicon films
    • excimer laser microstructuring
    • electron field emission


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