Excimer laser wet oxidation of hydrogenated amorphous silicon

Saydulla K. Persheyev, Yongchang Fan, Steve Reynolds, Mervyn J. Rose

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    2 Citations (Scopus)

    Abstract

    We present results of the excimer laser wet oxidisation of submicron thick hydrogenated amorphous silicon films (a-Si: H) deposited on silicon wafer. The a-Si: H film irradiation was carried out by multiple-pulses, large-spot, 20 ns KrF (248 nm) excimer laser and fluences of 140-300 mJ/cm(2), near to the silicon ablation threshold in an air atmosphere. The oxygen and hydrogen content and bonding in the thin films were analysed by Fourier Transform Infrared Spectroscopy (FTIR) techniques in the range 400-4000 cm(-1). We demonstrate that the presence of water molecules on the silicon surface will increase oxidation by 30-40%. The bonded hydrogen content in the films after oxidation annealing is decreased from 12 down to around 1 atomic percent. Wet oxidised surfaces present highly hydrophobic properties which appears to be determined by the amorphous silicon structure transformation and silicon surface energy modification forming a silicon/oxide (nitride) interface. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    Original languageEnglish
    Pages (from-to)968-971
    Number of pages4
    JournalPhysica Status Solidi C: Current Topics in Solid State Physics
    Volume7
    Issue number3-4
    DOIs
    Publication statusPublished - 2010
    Event23rd International Conference on Amorphous and Nanocrystalline Semiconductors - Utrecht, Netherlands
    Duration: 23 Aug 200928 Aug 2009

    Keywords

    • THIN-FILM TRANSISTORS
    • CRYSTALLIZATION
    • SPECTRA

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