Excimer laser wet oxidation of hydrogenated amorphous silicon

Saydulla K. Persheyev, Yongchang Fan, Steve Reynolds, Mervyn J. Rose

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    We present results of the excimer laser wet oxidisation of submicron thick hydrogenated amorphous silicon films (a-Si: H) deposited on silicon wafer. The a-Si: H film irradiation was carried out by multiple-pulses, large-spot, 20 ns KrF (248 nm) excimer laser and fluences of 140-300 mJ/cm(2), near to the silicon ablation threshold in an air atmosphere. The oxygen and hydrogen content and bonding in the thin films were analysed by Fourier Transform Infrared Spectroscopy (FTIR) techniques in the range 400-4000 cm(-1). We demonstrate that the presence of water molecules on the silicon surface will increase oxidation by 30-40%. The bonded hydrogen content in the films after oxidation annealing is decreased from 12 down to around 1 atomic percent. Wet oxidised surfaces present highly hydrophobic properties which appears to be determined by the amorphous silicon structure transformation and silicon surface energy modification forming a silicon/oxide (nitride) interface. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    Original languageEnglish
    Pages (from-to)968-971
    Number of pages4
    JournalPhysica Status Solidi C: Current Topics in Solid State Physics
    Volume7
    Issue number3-4
    DOIs
    Publication statusPublished - 2010
    Event23rd International Conference on Amorphous and Nanocrystalline Semiconductors - Utrecht, Netherlands
    Duration: 23 Aug 200928 Aug 2009

    Keywords

    • THIN-FILM TRANSISTORS
    • CRYSTALLIZATION
    • SPECTRA

    Cite this

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    title = "Excimer laser wet oxidation of hydrogenated amorphous silicon",
    abstract = "We present results of the excimer laser wet oxidisation of submicron thick hydrogenated amorphous silicon films (a-Si: H) deposited on silicon wafer. The a-Si: H film irradiation was carried out by multiple-pulses, large-spot, 20 ns KrF (248 nm) excimer laser and fluences of 140-300 mJ/cm(2), near to the silicon ablation threshold in an air atmosphere. The oxygen and hydrogen content and bonding in the thin films were analysed by Fourier Transform Infrared Spectroscopy (FTIR) techniques in the range 400-4000 cm(-1). We demonstrate that the presence of water molecules on the silicon surface will increase oxidation by 30-40{\%}. The bonded hydrogen content in the films after oxidation annealing is decreased from 12 down to around 1 atomic percent. Wet oxidised surfaces present highly hydrophobic properties which appears to be determined by the amorphous silicon structure transformation and silicon surface energy modification forming a silicon/oxide (nitride) interface. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",
    keywords = "THIN-FILM TRANSISTORS, CRYSTALLIZATION, SPECTRA",
    author = "Persheyev, {Saydulla K.} and Yongchang Fan and Steve Reynolds and Rose, {Mervyn J.}",
    year = "2010",
    doi = "10.1002/pssc.200982875",
    language = "English",
    volume = "7",
    pages = "968--971",
    journal = "Physica Status Solidi C: Current Topics in Solid State Physics",
    issn = "1862-6351",
    publisher = "Wiley-VCH",
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    Excimer laser wet oxidation of hydrogenated amorphous silicon. / Persheyev, Saydulla K.; Fan, Yongchang; Reynolds, Steve; Rose, Mervyn J.

    In: Physica Status Solidi C: Current Topics in Solid State Physics, Vol. 7, No. 3-4, 2010, p. 968-971.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Excimer laser wet oxidation of hydrogenated amorphous silicon

    AU - Persheyev, Saydulla K.

    AU - Fan, Yongchang

    AU - Reynolds, Steve

    AU - Rose, Mervyn J.

    PY - 2010

    Y1 - 2010

    N2 - We present results of the excimer laser wet oxidisation of submicron thick hydrogenated amorphous silicon films (a-Si: H) deposited on silicon wafer. The a-Si: H film irradiation was carried out by multiple-pulses, large-spot, 20 ns KrF (248 nm) excimer laser and fluences of 140-300 mJ/cm(2), near to the silicon ablation threshold in an air atmosphere. The oxygen and hydrogen content and bonding in the thin films were analysed by Fourier Transform Infrared Spectroscopy (FTIR) techniques in the range 400-4000 cm(-1). We demonstrate that the presence of water molecules on the silicon surface will increase oxidation by 30-40%. The bonded hydrogen content in the films after oxidation annealing is decreased from 12 down to around 1 atomic percent. Wet oxidised surfaces present highly hydrophobic properties which appears to be determined by the amorphous silicon structure transformation and silicon surface energy modification forming a silicon/oxide (nitride) interface. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    AB - We present results of the excimer laser wet oxidisation of submicron thick hydrogenated amorphous silicon films (a-Si: H) deposited on silicon wafer. The a-Si: H film irradiation was carried out by multiple-pulses, large-spot, 20 ns KrF (248 nm) excimer laser and fluences of 140-300 mJ/cm(2), near to the silicon ablation threshold in an air atmosphere. The oxygen and hydrogen content and bonding in the thin films were analysed by Fourier Transform Infrared Spectroscopy (FTIR) techniques in the range 400-4000 cm(-1). We demonstrate that the presence of water molecules on the silicon surface will increase oxidation by 30-40%. The bonded hydrogen content in the films after oxidation annealing is decreased from 12 down to around 1 atomic percent. Wet oxidised surfaces present highly hydrophobic properties which appears to be determined by the amorphous silicon structure transformation and silicon surface energy modification forming a silicon/oxide (nitride) interface. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    KW - THIN-FILM TRANSISTORS

    KW - CRYSTALLIZATION

    KW - SPECTRA

    U2 - 10.1002/pssc.200982875

    DO - 10.1002/pssc.200982875

    M3 - Article

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    JO - Physica Status Solidi C: Current Topics in Solid State Physics

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