Femtosecond semiconductor laser emitting high average power 175-GHz pulse train

Keith G. Wilcox, Adrian H. Quarterman, Vasileios Apostolopoulos, Oliver J. Morris, C. Robin Head, Andrew P. Turnbull, Harvey E. Beere, Ian Farrer, David A. Ritchie, Anne C. Tropper

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We describe a SESAM-mode-locked surface-emitting quantum well laser producing 400-fs pulses, with repetition frequency 175 GHz corresponding to the 117th harmonic of the external laser cavity, and average power 300 mW.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2012
DOIs
Publication statusPublished - 1 Dec 2012
EventQuantum Electronics and Laser Science Conference, QELS 2012 - San Jose, CA, United States
Duration: 6 May 201211 May 2012

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2012
CountryUnited States
CitySan Jose, CA
Period6/05/1211/05/12

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  • Cite this

    Wilcox, K. G., Quarterman, A. H., Apostolopoulos, V., Morris, O. J., Head, C. R., Turnbull, A. P., Beere, H. E., Farrer, I., Ritchie, D. A., & Tropper, A. C. (2012). Femtosecond semiconductor laser emitting high average power 175-GHz pulse train. In Quantum Electronics and Laser Science Conference, QELS 2012 (Optics InfoBase Conference Papers). https://doi.org/10.1364/CLEO_AT.2012.JW2A.102