Ferroelectric Domain Wall Memristor

James P. V. McConville, Haidong Lu, Bo Wang, Yueze Tan, Charlotte Cochard, Michele Conroy, Kalani Moore, Alan Harvey, Ursel Bangert, Long Qing Chen, Alexei Gruverman, J. Marty Gregg (Lead / Corresponding author)

Research output: Contribution to journalArticlepeer-review

84 Citations (Scopus)
63 Downloads (Pure)


A domain wall-enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric-field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this “domain wall memristor” demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits.

Original languageEnglish
Article number2000109
Number of pages8
JournalAdvanced Functional Materials
Issue number28
Early online date13 May 2020
Publication statusPublished - 9 Jul 2020


  • ferroelectric domain wall
  • memristor

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics


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