Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation

M. E. Barnes, Z. Mihoubi, K. G. Wilcox, A. H. Quarterman, I. Farrer, D. A. Ritchie, A. Garnache, S. Hoogland, V. Apostolopoulos, A. C. Tropper (Lead / Corresponding author)

Research output: Contribution to journalArticle

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Abstract

We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by "class A" dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for broad-band InGaAs/GaAs quantum well gain surface-emitting semiconductor laser structures capable of producing pulses down to 60 fs width when mode-locked with an optical Stark saturable absorber mirror.

Original languageEnglish
Pages (from-to)21330-21341
Number of pages12
JournalOptics Express
Volume18
Issue number20
Early online date22 Sep 2010
DOIs
Publication statusPublished - 27 Sep 2010

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quantum well lasers
surface emitting lasers
bandwidth
filters
absorbers
condensation
semiconductor lasers
quantum wells
mirrors
broadband
pulses
lasers

Cite this

Barnes, M. E., Mihoubi, Z., Wilcox, K. G., Quarterman, A. H., Farrer, I., Ritchie, D. A., ... Tropper, A. C. (2010). Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation. Optics Express, 18(20), 21330-21341. https://doi.org/10.1364/OE.18.021330
Barnes, M. E. ; Mihoubi, Z. ; Wilcox, K. G. ; Quarterman, A. H. ; Farrer, I. ; Ritchie, D. A. ; Garnache, A. ; Hoogland, S. ; Apostolopoulos, V. ; Tropper, A. C. / Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation. In: Optics Express. 2010 ; Vol. 18, No. 20. pp. 21330-21341.
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Barnes, ME, Mihoubi, Z, Wilcox, KG, Quarterman, AH, Farrer, I, Ritchie, DA, Garnache, A, Hoogland, S, Apostolopoulos, V & Tropper, AC 2010, 'Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation', Optics Express, vol. 18, no. 20, pp. 21330-21341. https://doi.org/10.1364/OE.18.021330

Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation. / Barnes, M. E.; Mihoubi, Z.; Wilcox, K. G.; Quarterman, A. H.; Farrer, I.; Ritchie, D. A.; Garnache, A.; Hoogland, S.; Apostolopoulos, V.; Tropper, A. C. (Lead / Corresponding author).

In: Optics Express, Vol. 18, No. 20, 27.09.2010, p. 21330-21341.

Research output: Contribution to journalArticle

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AU - Barnes, M. E.

AU - Mihoubi, Z.

AU - Wilcox, K. G.

AU - Quarterman, A. H.

AU - Farrer, I.

AU - Ritchie, D. A.

AU - Garnache, A.

AU - Hoogland, S.

AU - Apostolopoulos, V.

AU - Tropper, A. C.

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