Gain saturation in 60-fs mode-locked semiconductor laser

Adrian H. Quarterman, Keith G. Wilcox, Vasilis Apostolopoulos, Zakaria Mihoubi, Mark Barnes, Ian Farrer, David A. Ritchie, Anne Tropper

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation.

Original languageEnglish
Title of host publicationCLEO/QELS
Subtitle of host publication2010 Laser Science to Photonic Applications
Place of PublicationNew York
PublisherIEEE
Number of pages2
ISBN (Electronic)9781557528902
Publication statusPublished - 12 Oct 2010
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: 16 May 201021 May 2010

Conference

ConferenceLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
CountryUnited States
CitySan Jose, CA
Period16/05/1021/05/10

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  • Research Output

    • 1 Conference contribution

    Gain Saturation in 60-fs Mode-Locked Semiconductor Laser

    Quarterman, A. H., Wilcox, K., Apostolopoulos, V., Mihoubi, Z., Barnes, M., Farrer, I., Ritchie, D. A. & Tropper, A. C., 2010, Conference on Lasers and Electro-Optics, CLEO 2010. Optical Society of America, 2 p. CMY4. (Optics InfoBase Conference Papers).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Cite this

    Quarterman, A. H., Wilcox, K. G., Apostolopoulos, V., Mihoubi, Z., Barnes, M., Farrer, I., Ritchie, D. A., & Tropper, A. (2010). Gain saturation in 60-fs mode-locked semiconductor laser. In CLEO/QELS: 2010 Laser Science to Photonic Applications [5500820] IEEE. https://ieeexplore.ieee.org/document/5500820