Abstract
A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation.
| Original language | English |
|---|---|
| Title of host publication | CLEO/QELS |
| Subtitle of host publication | 2010 Laser Science to Photonic Applications |
| Place of Publication | New York |
| Publisher | IEEE |
| Number of pages | 2 |
| ISBN (Electronic) | 9781557528902 |
| Publication status | Published - 12 Oct 2010 |
| Event | Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States Duration: 16 May 2010 → 21 May 2010 |
Conference
| Conference | Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 |
|---|---|
| Country/Territory | United States |
| City | San Jose, CA |
| Period | 16/05/10 → 21/05/10 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Radiation
Fingerprint
Dive into the research topics of 'Gain saturation in 60-fs mode-locked semiconductor laser'. Together they form a unique fingerprint.Research output
- 1 Conference contribution
-
Gain Saturation in 60-fs Mode-Locked Semiconductor Laser
Quarterman, A. H., Wilcox, K., Apostolopoulos, V. (Lead / Corresponding author), Mihoubi, Z., Barnes, M., Farrer, I., Ritchie, D. A. & Tropper, A. C., 2010, Conference on Lasers and Electro-Optics, CLEO 2010. Optical Society of America, 2 p. CMY4. (Optics InfoBase Conference Papers).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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