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We report a 1-μm mode-locked VECSEL using a 4.5λ/2 antiresonant microcavity gain structure. The pulses were generated using two different semiconductor saturable absorber mirrors (SESAMs). The first was grown for operation at 1000 nm and the SESAM was heated to 85°C and the gain cooled to -23°C to wavelength match the gain and absorber. The second SESAM was designed for 1030 nm and mode-locked operation was achieved with both gain and SESAM at -12°C. The first approach generated 205-fs pulses with an average power of 2 mW, the second 260-fs pulses with an average power of 13 mW.
|Title of host publication||Vertical External Cavity Surface Emitting Lasers (VECSELs) III|
|Publication status||Published - 15 Apr 2013|
|Event||Vertical External Cavity Surface Emitting Lasers (VECSELs) III - San Francisco, CA, United States|
Duration: 3 Feb 2013 → 5 Feb 2013
|Name||Proceedings of SPIE - The International Society for Optical Engineering|
|Conference||Vertical External Cavity Surface Emitting Lasers (VECSELs) III|
|City||San Francisco, CA|
|Period||3/02/13 → 5/02/13|
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1/10/13 → 28/02/18