Generation of propagation-invariant light beams from semiconductor light sources

G. S. Sokolovskii, V. V. Dudelev, S. N. Losev, S. A. Zolotovskaya, A. G. Deryagin, V. I. Kuchinskii, E. U. Rafailov, W. Sibbett

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    Abstract

    We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178A degrees and 170A degrees, which provided beams with a central spot diameter of 100 and 10 mu m, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 mu m) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

    Original languageEnglish
    Pages (from-to)1075-1078
    Number of pages4
    JournalTechnical Physics Letters
    Volume34
    Issue number12
    DOIs
    Publication statusPublished - Dec 2008

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