Generation of propagation-invariant light beams from semiconductor light sources

G. S. Sokolovskii, V. V. Dudelev, S. N. Losev, S. A. Zolotovskaya, A. G. Deryagin, V. I. Kuchinskii, E. U. Rafailov, W. Sibbett

    Research output: Contribution to journalArticlepeer-review

    24 Citations (Scopus)


    We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178A degrees and 170A degrees, which provided beams with a central spot diameter of 100 and 10 mu m, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 mu m) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

    Original languageEnglish
    Pages (from-to)1075-1078
    Number of pages4
    JournalTechnical Physics Letters
    Issue number12
    Publication statusPublished - Dec 2008


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