Generation of propagation-invariant light beams from semiconductor light sources

G. S. Sokolovskii; V. V. Dudelev; S. N. Losev; S. A. Zolotovskaya; A. G. Deryagin; V. I. Kuchinskii; E. U. Rafailov; W. Sibbett

doi:10.1134/S1063785008120262

Generation of propagation-invariant light beams from semiconductor light sources

G. S. Sokolovskii
, V. V. Dudelev
, S. N. Losev
, S. A. Zolotovskaya
, A. G. Deryagin
, V. I. Kuchinskii
, E. U. Rafailov
, W. Sibbett

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178A degrees and 170A degrees, which provided beams with a central spot diameter of 100 and 10 mu m, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 mu m) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

Original language	English
Pages (from-to)	1075-1078
Number of pages	4
Journal	Technical Physics Letters
Volume	34
Issue number	12
DOIs	https://doi.org/10.1134/S1063785008120262
Publication status	Published - Dec 2008

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title = "Generation of propagation-invariant light beams from semiconductor light sources",

abstract = "We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178A degrees and 170A degrees, which provided beams with a central spot diameter of 100 and 10 mu m, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 mu m) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.",

author = "Sokolovskii, \{G. S.\} and Dudelev, \{V. V.\} and Losev, \{S. N.\} and Zolotovskaya, \{S. A.\} and Deryagin, \{A. G.\} and Kuchinskii, \{V. I.\} and Rafailov, \{E. U.\} and W. Sibbett",

year = "2008",

month = dec,

doi = "10.1134/S1063785008120262",

language = "English",

volume = "34",

pages = "1075--1078",

journal = "Technical Physics Letters",

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publisher = "Pleiades Publishing",

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TY - JOUR

T1 - Generation of propagation-invariant light beams from semiconductor light sources

AU - Sokolovskii, G. S.

AU - Dudelev, V. V.

AU - Losev, S. N.

AU - Zolotovskaya, S. A.

AU - Deryagin, A. G.

AU - Kuchinskii, V. I.

AU - Rafailov, E. U.

AU - Sibbett, W.

PY - 2008/12

Y1 - 2008/12

N2 - We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178A degrees and 170A degrees, which provided beams with a central spot diameter of 100 and 10 mu m, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 mu m) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

AB - We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178A degrees and 170A degrees, which provided beams with a central spot diameter of 100 and 10 mu m, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 mu m) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

U2 - 10.1134/S1063785008120262

DO - 10.1134/S1063785008120262

M3 - Article

SN - 1063-7850

VL - 34

SP - 1075

EP - 1078

JO - Technical Physics Letters

JF - Technical Physics Letters

IS - 12

ER -

Generation of propagation-invariant light beams from semiconductor light sources

Abstract

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