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Generation-recombination noise in amorphous semiconductors
R. I. Badran, C. Main,
S. Reynolds
Physics
School of Science and Engineering
Research output
:
Contribution to journal
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Article
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peer-review
1
Citation (Scopus)
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Keyphrases
Amorphous Semiconductors
100%
Noise Spectrum
100%
Generation-recombination Noise
100%
Characteristic Time Constant
60%
Energy Distribution
40%
Linear Superposition
40%
Trap Level
40%
Free Carriers
20%
Hydrogenated Amorphous Silicon
20%
Density of States
20%
Generation-recombination Processes
20%
Lorentzian Noise
20%
Flat Density
20%
Correlation Effects
20%
Superposition Approach
20%
Engineering
Noise Spectra
100%
Characteristic Time
60%
Energy Distribution
40%
Constant Time
40%
Linear Superposition
40%
Energy Engineering
20%
Hydrogenated Amorphous Silicon
20%
Superposition
20%
Alternative Model
20%
Independent Source
20%
Crosscorrelation
20%
Physics
Amorphous Semiconductor
100%
Noise Spectra
100%
Time Constant
100%
Energy Distribution
40%
Cross Correlation
20%
Density of States
20%
Amorphous Silicon
20%