High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

D. I. Nikitichev, Y. Ding, M. Ruiz, M. Calligaro, N. Michel, M. Krakowski, I. Krestnikov, D. Livshits, M. A. Cataluna, E. U. Rafailov

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    Abstract

    We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.

    Original languageEnglish
    Pages (from-to)609-613
    Number of pages5
    JournalApplied Physics B: Lasers and Optics
    Volume103
    Issue number3
    DOIs
    Publication statusPublished - Jun 2011

    Keywords

    • SPONTANEOUS EMISSION FACTOR
    • SEMICONDUCTOR-LASERS
    • OUTPUT POWER
    • DIODE-LASERS

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