High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

D. I. Nikitichev; Y. Ding; M. Ruiz; M. Calligaro; N. Michel; M. Krakowski; I. Krestnikov; D. Livshits; M. A.  Cataluna; E. U.  Rafailov

doi:10.1007/s00340-010-4290-5

High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

D. I. Nikitichev, Y. Ding, M. Ruiz, M. Calligaro, N. Michel, M. Krakowski, I. Krestnikov, D. Livshits, M. A. Cataluna, E. U. Rafailov

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.

Original language	English
Pages (from-to)	609-613
Number of pages	5
Journal	Applied Physics B: Lasers and Optics
Volume	103
Issue number	3
DOIs	https://doi.org/10.1007/s00340-010-4290-5
Publication status	Published - Jun 2011

Keywords

SPONTANEOUS EMISSION FACTOR
SEMICONDUCTOR-LASERS
OUTPUT POWER
DIODE-LASERS

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10.1007/s00340-010-4290-5

Cite this

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title = "High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers",

abstract = "We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.",

keywords = "SPONTANEOUS EMISSION FACTOR, SEMICONDUCTOR-LASERS, OUTPUT POWER, DIODE-LASERS",

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T1 - High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

AU - Nikitichev, D. I.

AU - Ding, Y.

AU - Ruiz, M.

AU - Calligaro, M.

AU - Michel, N.

AU - Krakowski, M.

AU - Krestnikov, I.

AU - Livshits, D.

AU - Cataluna, M. A.

AU - Rafailov, E. U.

PY - 2011/6

Y1 - 2011/6

N2 - We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.

AB - We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.

KW - SPONTANEOUS EMISSION FACTOR

KW - SEMICONDUCTOR-LASERS

KW - OUTPUT POWER

KW - DIODE-LASERS

U2 - 10.1007/s00340-010-4290-5

DO - 10.1007/s00340-010-4290-5

M3 - Article

SN - 0946-2171

VL - 103

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JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

IS - 3

ER -

High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers

Abstract

Keywords

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