High-power quantum dot semiconductor disk lasers

Jussi Rautiainen, Mantas Butkus, Igor Krestnikov, Edik U. Rafailov, Oleg Okhotnikov

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.
    Original languageEnglish
    Title of host publicationVertical External Cavity Surface Emitting Lasers (VECSELs) II
    EditorsAnne C. Tropper
    Place of PublicationBellingham
    PublisherSPIE-International Society for Optical Engineering
    ISBN (Print)9780819488855
    DOIs
    Publication statusPublished - 2012
    EventSPIE Photonics West 2012: Vertical External Cavity Surface Emitting Lasers (VECSELs) II - The Moscone Center, San Francisco, United States
    Duration: 23 Jan 201224 Jan 2012
    http://spie.org/x85481.xml

    Publication series

    NameProceedings of SPIE
    PublisherSPIE
    Volume8242

    Conference

    ConferenceSPIE Photonics West 2012: Vertical External Cavity Surface Emitting Lasers (VECSELs) II
    CountryUnited States
    CitySan Francisco
    Period23/01/1224/01/12
    Internet address

    Fingerprint

    quantum dots
    lasers
    heat
    frequency converters
    molecular beam epitaxy
    geometry
    excitation

    Cite this

    Rautiainen, J., Butkus, M., Krestnikov, I., Rafailov, E. U., & Okhotnikov, O. (2012). High-power quantum dot semiconductor disk lasers. In A. C. Tropper (Ed.), Vertical External Cavity Surface Emitting Lasers (VECSELs) II [824207 ] (Proceedings of SPIE; Vol. 8242). Bellingham: SPIE-International Society for Optical Engineering. https://doi.org/10.1117/12.905067
    Rautiainen, Jussi ; Butkus, Mantas ; Krestnikov, Igor ; Rafailov, Edik U. ; Okhotnikov, Oleg. / High-power quantum dot semiconductor disk lasers. Vertical External Cavity Surface Emitting Lasers (VECSELs) II. editor / Anne C. Tropper. Bellingham : SPIE-International Society for Optical Engineering, 2012. (Proceedings of SPIE).
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    abstract = "The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.",
    author = "Jussi Rautiainen and Mantas Butkus and Igor Krestnikov and Rafailov, {Edik U.} and Oleg Okhotnikov",
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    doi = "10.1117/12.905067",
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    Rautiainen, J, Butkus, M, Krestnikov, I, Rafailov, EU & Okhotnikov, O 2012, High-power quantum dot semiconductor disk lasers. in AC Tropper (ed.), Vertical External Cavity Surface Emitting Lasers (VECSELs) II., 824207 , Proceedings of SPIE, vol. 8242, SPIE-International Society for Optical Engineering, Bellingham, SPIE Photonics West 2012: Vertical External Cavity Surface Emitting Lasers (VECSELs) II, San Francisco, United States, 23/01/12. https://doi.org/10.1117/12.905067

    High-power quantum dot semiconductor disk lasers. / Rautiainen, Jussi; Butkus, Mantas; Krestnikov, Igor; Rafailov, Edik U.; Okhotnikov, Oleg.

    Vertical External Cavity Surface Emitting Lasers (VECSELs) II. ed. / Anne C. Tropper. Bellingham : SPIE-International Society for Optical Engineering, 2012. 824207 (Proceedings of SPIE; Vol. 8242).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

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    AB - The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.

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    Rautiainen J, Butkus M, Krestnikov I, Rafailov EU, Okhotnikov O. High-power quantum dot semiconductor disk lasers. In Tropper AC, editor, Vertical External Cavity Surface Emitting Lasers (VECSELs) II. Bellingham: SPIE-International Society for Optical Engineering. 2012. 824207 . (Proceedings of SPIE). https://doi.org/10.1117/12.905067