High-power quantum dot semiconductor disk lasers

Jussi Rautiainen; Mantas Butkus; Igor Krestnikov; Edik U. Rafailov; Oleg Okhotnikov

doi:10.1117/12.905067

High-power quantum dot semiconductor disk lasers

Jussi Rautiainen, Mantas Butkus, Igor Krestnikov, Edik U. Rafailov, Oleg Okhotnikov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.

Original language	English
Title of host publication	Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Editors	Anne C. Tropper
Place of Publication	Bellingham
Publisher	SPIE-International Society for Optical Engineering
ISBN (Print)	9780819488855
DOIs	https://doi.org/10.1117/12.905067
Publication status	Published - 2012
Event	SPIE Photonics West 2012: Vertical External Cavity Surface Emitting Lasers (VECSELs) II - The Moscone Center, San Francisco, United States Duration: 23 Jan 2012 → 24 Jan 2012 http://spie.org/x85481.xml

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	8242

Conference

Conference	SPIE Photonics West 2012: Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Country/Territory	United States
City	San Francisco
Period	23/01/12 → 24/01/12
Internet address	http://spie.org/x85481.xml

Access to Document

10.1117/12.905067

Cite this

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title = "High-power quantum dot semiconductor disk lasers",

abstract = "The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.",

author = "Jussi Rautiainen and Mantas Butkus and Igor Krestnikov and Rafailov, {Edik U.} and Oleg Okhotnikov",

year = "2012",

doi = "10.1117/12.905067",

language = "English",

isbn = "9780819488855",

series = "Proceedings of SPIE",

publisher = "SPIE-International Society for Optical Engineering",

editor = "Tropper, {Anne C. }",

booktitle = "Vertical External Cavity Surface Emitting Lasers (VECSELs) II",

note = "SPIE Photonics West 2012: Vertical External Cavity Surface Emitting Lasers (VECSELs) II ; Conference date: 23-01-2012 Through 24-01-2012",

url = "http://spie.org/x85481.xml",

}

Rautiainen, J, Butkus, M, Krestnikov, I, Rafailov, EU & Okhotnikov, O 2012, High-power quantum dot semiconductor disk lasers. in AC Tropper (ed.), Vertical External Cavity Surface Emitting Lasers (VECSELs) II., 824207 , Proceedings of SPIE, vol. 8242, SPIE-International Society for Optical Engineering, Bellingham, SPIE Photonics West 2012: Vertical External Cavity Surface Emitting Lasers (VECSELs) II, San Francisco, United States, 23/01/12. https://doi.org/10.1117/12.905067

High-power quantum dot semiconductor disk lasers. / Rautiainen, Jussi; Butkus, Mantas; Krestnikov, Igor et al.
Vertical External Cavity Surface Emitting Lasers (VECSELs) II. ed. / Anne C. Tropper. Bellingham: SPIE-International Society for Optical Engineering, 2012. 824207 (Proceedings of SPIE; Vol. 8242).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - High-power quantum dot semiconductor disk lasers

AU - Rautiainen, Jussi

AU - Butkus, Mantas

AU - Krestnikov, Igor

AU - Rafailov, Edik U.

AU - Okhotnikov, Oleg

PY - 2012

Y1 - 2012

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AB - The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.

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M3 - Conference contribution

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T3 - Proceedings of SPIE

BT - Vertical External Cavity Surface Emitting Lasers (VECSELs) II

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PB - SPIE-International Society for Optical Engineering

CY - Bellingham

T2 - SPIE Photonics West 2012: Vertical External Cavity Surface Emitting Lasers (VECSELs) II

Y2 - 23 January 2012 through 24 January 2012

ER -

High-power quantum dot semiconductor disk lasers

Abstract

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Quantum dot based semiconductor disk lasers

Cite this

High-power quantum dot semiconductor disk lasers

Abstract

Publication series

Conference

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Student theses

Quantum dot based semiconductor disk lasers

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