High resolution density of states spectroscopy in semiconductors by exact post-transit current analysis

C. Main, S. Reynolds, R. I. Badran, J. M. Marshall

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    We show that the analysis of post-transit photocurrent i(t) to determine the energy distribution g(E) of trapping states in a semiconductor is capable of much finer energy resolution than has hitherto been realized. Existing methods use a Laplace inversion of i(t) data to find g(E) but employ a delta function approximation for trap release times. In this article we retain the exponential distribution function for the release time and solve the rate equations directly. The analysis is performed on computer generated post-transit data for distributed and discrete traps, and compared with the earlier method and other related transform methods for determining the density of states, g(E). © 2000 American Institute of Physics.

    Original languageEnglish
    Pages (from-to)1190-1192
    Number of pages3
    JournalJournal of Applied Physics
    Volume88
    Issue number2
    DOIs
    Publication statusPublished - 2000

    Fingerprint

    transit
    traps
    high resolution
    delta function
    exponential functions
    spectroscopy
    photocurrents
    energy distribution
    distribution functions
    trapping
    inversions
    physics
    approximation
    energy

    Cite this

    @article{c5a6187de7264ee0a009e3fe316070da,
    title = "High resolution density of states spectroscopy in semiconductors by exact post-transit current analysis",
    abstract = "We show that the analysis of post-transit photocurrent i(t) to determine the energy distribution g(E) of trapping states in a semiconductor is capable of much finer energy resolution than has hitherto been realized. Existing methods use a Laplace inversion of i(t) data to find g(E) but employ a delta function approximation for trap release times. In this article we retain the exponential distribution function for the release time and solve the rate equations directly. The analysis is performed on computer generated post-transit data for distributed and discrete traps, and compared with the earlier method and other related transform methods for determining the density of states, g(E). {\circledC} 2000 American Institute of Physics.",
    author = "C. Main and S. Reynolds and Badran, {R. I.} and Marshall, {J. M.}",
    year = "2000",
    doi = "10.1063/1.373797",
    language = "English",
    volume = "88",
    pages = "1190--1192",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics",
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    }

    High resolution density of states spectroscopy in semiconductors by exact post-transit current analysis. / Main, C.; Reynolds, S.; Badran, R. I.; Marshall, J. M.

    In: Journal of Applied Physics, Vol. 88, No. 2, 2000, p. 1190-1192.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - High resolution density of states spectroscopy in semiconductors by exact post-transit current analysis

    AU - Main, C.

    AU - Reynolds, S.

    AU - Badran, R. I.

    AU - Marshall, J. M.

    PY - 2000

    Y1 - 2000

    N2 - We show that the analysis of post-transit photocurrent i(t) to determine the energy distribution g(E) of trapping states in a semiconductor is capable of much finer energy resolution than has hitherto been realized. Existing methods use a Laplace inversion of i(t) data to find g(E) but employ a delta function approximation for trap release times. In this article we retain the exponential distribution function for the release time and solve the rate equations directly. The analysis is performed on computer generated post-transit data for distributed and discrete traps, and compared with the earlier method and other related transform methods for determining the density of states, g(E). © 2000 American Institute of Physics.

    AB - We show that the analysis of post-transit photocurrent i(t) to determine the energy distribution g(E) of trapping states in a semiconductor is capable of much finer energy resolution than has hitherto been realized. Existing methods use a Laplace inversion of i(t) data to find g(E) but employ a delta function approximation for trap release times. In this article we retain the exponential distribution function for the release time and solve the rate equations directly. The analysis is performed on computer generated post-transit data for distributed and discrete traps, and compared with the earlier method and other related transform methods for determining the density of states, g(E). © 2000 American Institute of Physics.

    U2 - 10.1063/1.373797

    DO - 10.1063/1.373797

    M3 - Article

    VL - 88

    SP - 1190

    EP - 1192

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 2

    ER -