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Hole dangling-bond capture cross-sections in a-Si:H
David M. Goldie
Research output
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Article
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peer-review
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Keyphrases
A-Si
100%
Capture Cross Section
100%
Dangling Bonds
100%
Fermi Energy
33%
Band Tail States
16%
Valence Band
16%
Hydrogenated Amorphous Silicon
16%
Tunneling
16%
Conduction Band Edge
16%
Gaussian Distribution
16%
Hole Mobility
16%
Mobility-lifetime Product
16%
Band Gap
16%
Doping Effect
16%
Cross-section Ratio
16%
Bond Parameters
16%
Lifetime Value
16%
Engineering
Dangling Bond
100%
Capture Cross Section
100%
Fermi Energy
33%
Cross Section
16%
Valence Band
16%
Hydrogenated Amorphous Silicon
16%
Band Tail
16%
Gaussians
16%
Conduction Band Edge
16%
Energy Gap
16%
Tunnel Construction
16%
Material Science
Amorphous Silicon
100%
Hole Mobility
100%