Identification of A- and B-Site Cation Vacancy Defects in Perovskite Oxide Thin Films

D. J.  Keeble; S. Wicklein; R. Dittmann; L. Ravelli; R. A. Mackie; W. Egger

doi:10.1103/PhysRevLett.105.226102

Identification of A- and B-Site Cation Vacancy Defects in Perovskite Oxide Thin Films

D. J. Keeble, S. Wicklein, R. Dittmann, L. Ravelli, R. A. Mackie, W. Egger

Research output: Contribution to journal › Article › peer-review

157 Citations (Scopus)

Abstract

Cation vacancies on both sublattices (V-Ti, V-Sr) have been identified in homoepitaxial pulsed laser deposited SrTiO3 films using high intensity variable energy positron annihilation lifetime spectroscopy (PALS) measurements. Film nonstoichiometry was varied by varying laser fluence. PALS showed that on increasing the fluence above the Ti/Sr similar to 1 value, the concentration ratio [V-Sr]/[V-Ti] systematically increased. Reducing the fluence into the Ti-poor region below resulted in additional vacancy cluster defect formation. Vacancy concentrations greater than similar to 50 ppm were observed in all films.

Original language	English
Article number	226102
Pages (from-to)	-
Number of pages	4
Journal	Physical Review Letters
Volume	105
Issue number	22
DOIs	https://doi.org/10.1103/PhysRevLett.105.226102
Publication status	Published - 23 Nov 2010

Keywords

SRTIO3
ELECTRONICS

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10.1103/PhysRevLett.105.226102

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title = "Identification of A- and B-Site Cation Vacancy Defects in Perovskite Oxide Thin Films",

abstract = "Cation vacancies on both sublattices (V-Ti, V-Sr) have been identified in homoepitaxial pulsed laser deposited SrTiO3 films using high intensity variable energy positron annihilation lifetime spectroscopy (PALS) measurements. Film nonstoichiometry was varied by varying laser fluence. PALS showed that on increasing the fluence above the Ti/Sr similar to 1 value, the concentration ratio [V-Sr]/[V-Ti] systematically increased. Reducing the fluence into the Ti-poor region below resulted in additional vacancy cluster defect formation. Vacancy concentrations greater than similar to 50 ppm were observed in all films.",

keywords = "SRTIO3, ELECTRONICS",

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doi = "10.1103/PhysRevLett.105.226102",

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T1 - Identification of A- and B-Site Cation Vacancy Defects in Perovskite Oxide Thin Films

AU - Keeble, D. J.

AU - Wicklein, S.

AU - Dittmann, R.

AU - Ravelli, L.

AU - Mackie, R. A.

AU - Egger, W.

PY - 2010/11/23

Y1 - 2010/11/23

N2 - Cation vacancies on both sublattices (V-Ti, V-Sr) have been identified in homoepitaxial pulsed laser deposited SrTiO3 films using high intensity variable energy positron annihilation lifetime spectroscopy (PALS) measurements. Film nonstoichiometry was varied by varying laser fluence. PALS showed that on increasing the fluence above the Ti/Sr similar to 1 value, the concentration ratio [V-Sr]/[V-Ti] systematically increased. Reducing the fluence into the Ti-poor region below resulted in additional vacancy cluster defect formation. Vacancy concentrations greater than similar to 50 ppm were observed in all films.

AB - Cation vacancies on both sublattices (V-Ti, V-Sr) have been identified in homoepitaxial pulsed laser deposited SrTiO3 films using high intensity variable energy positron annihilation lifetime spectroscopy (PALS) measurements. Film nonstoichiometry was varied by varying laser fluence. PALS showed that on increasing the fluence above the Ti/Sr similar to 1 value, the concentration ratio [V-Sr]/[V-Ti] systematically increased. Reducing the fluence into the Ti-poor region below resulted in additional vacancy cluster defect formation. Vacancy concentrations greater than similar to 50 ppm were observed in all films.

KW - SRTIO3

KW - ELECTRONICS

U2 - 10.1103/PhysRevLett.105.226102

DO - 10.1103/PhysRevLett.105.226102

M3 - Article

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SN - 0031-9007

VL - 105

SP - -

JO - Physical Review Letters

JF - Physical Review Letters

IS - 22

M1 - 226102

ER -

Identification of A- and B-Site Cation Vacancy Defects in Perovskite Oxide Thin Films

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Keywords

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