InAs/GaAs quantum dots for THz generation

N. S. Daghestani, M. A. Cataluna, G. Berry, G. Ross, M. J. Rose

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)


    We report pulsed terahertz generation from InAs/GaAs quantum-dot based photoconductive devices. For 800 nm optical excitation, the dots act as recombination centres for carriers generated in the GaAs layers. Using photoreflective pump-probe measurements we demonstrate that the photogenerated carrier lifetime decreases when a lateral bias is applied. This can be attributed to an increase in the capture area of the dots when under bias. Two types of antenna metallization were investigated; non-Ohmic, and quasi-Ohmic contacts. Non-Ohmic antennae displayed resilience to Joule heating when operated at a field strength of 46 MV/m. The breakdown field of the devices was 48 MV/m, which is comparable to the breakdown field of bulk GaAs (similar to 50 MV/m). The maximum estimated infrared-to-THz conversion efficiency is similar to 1x10(-5). (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    Original languageEnglish
    Pages (from-to)222-225
    Number of pages4
    JournalPhysica Status Solidi C: Current Topics in Solid State Physics
    Issue number2
    Publication statusPublished - 2012
    EventCompound Semiconductor Week 2011: 38th International Symposium on Compound Semiconductors - Berlin, Germany
    Duration: 22 May 201126 May 2011


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