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InAs/GaAs quantum dots for THz generation
N. S. Daghestani
, M. A. Cataluna
, G. Berry
, G. Ross
, M. J. Rose
Research output
:
Contribution to journal
›
Article
›
peer-review
2
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Citations (Scopus)
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Keyphrases
THz Generation
100%
GaAs Quantum Dot
100%
Antenna
100%
Breakdown Field
100%
Non-Ohmic
100%
Pump-probe Technique
50%
Resilience
50%
Field Strength
50%
Gallium Arsenide
50%
Joule Heating
50%
Carrier Lifetime
50%
Terahertz Generation
50%
Photoconductive Devices
50%
Recombination Centers
50%
Conversion Efficiency
50%
Bulk GaAs
50%
Optical Excitation
50%
Capture Area
50%
Photogenerated Carriers
50%
Lateral Bias
50%
Metallization
50%
Ohmic Contact
50%
Engineering
Quantum Dot
100%
Gallium Arsenide
100%
Antenna
66%
Breakdown Field
66%
Field Strength
33%
Terahertz
33%
Conversion Efficiency
33%
Carrier Lifetime
33%
Recombination Centre
33%
Gaas Layer
33%
Metallizations
33%
Photogenerated Carrier
33%
Ohmic Contacts
33%
Resistance Heating
33%
Physics
Quantum Dot
100%
Antenna
100%
Field Strength
50%
Photoconductivity
50%
Photoexcitation
50%
Metallizing
50%
Material Science
Quantum Dot
100%
Gallium Arsenide
100%
Antenna
50%
Carrier Lifetime
25%
Chemical Engineering
Joule Heating
100%
Metallizing
100%