Influence of charged walls and defects on DC resistivity and dielectric relaxation in Cu-Cl boracite

Charlotte Cochard (Lead / Corresponding author), Torsten Granzow, C. M. Fernandez-Posada, M. A. Carpenter, Raymond G. P. McQuaid, Joseph G. M. Guy, R. W. Whatmore, J. Marty Gregg

Research output: Working paper/PreprintPreprint

7 Downloads (Pure)

Abstract

Charged domain walls form spontaneously in Cu-Cl boracite on cooling through the phase transition. These walls exhibit changed conductivity compared to the bulk and motion consistent with the existence of negative capacitance. Here, we present the dielectric permittivity and DC resistivity of bulk Cu-Cl boracite as a function of temperature (-140 °C to 150 °C) and frequency (1 mHz to 10 MHz). The thermal behaviour of the two observed dielectric relaxations and the DC resistivity is discussed. We propose that the relaxations can be explained by the existence of point defects, most likely local complexes created by a change of valence of Cu and accompanying oxygen vacancies. In addition, the sudden change in resistivity seen at the phase transition suggests that conductive domain walls contribute significantly to the conductivity in the ferroelectric phase.

The following article has been submitted to Applied Physics Letters.
Original languageEnglish
PublisherarXiv
Number of pages9
Publication statusPublished - 19 Aug 2021

Fingerprint

Dive into the research topics of 'Influence of charged walls and defects on DC resistivity and dielectric relaxation in Cu-Cl boracite'. Together they form a unique fingerprint.

Cite this