Influence of the axicon characteristics and beam propagation parameter M2 on the formation of Bessel beams from semiconductor lasers

G. S. Sokolovskii, V. V. Dudelev, S. N. Losev, M. Butkus, K. K. Soboleva, A. I. Sobolev, A. G. Deryagin, V. I. Kuchinskii, W. Sibbett, E. U. Rafailov

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    Abstract

    We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M-2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M-2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.

    Original languageEnglish
    Pages (from-to)423-427
    Number of pages5
    JournalQuantum Electronics
    Volume43
    Issue number5
    DOIs
    Publication statusPublished - 2013

    Keywords

    • OBLIQUE ILLUMINATION
    • DIODES
    • LIGHT-BEAMS
    • quasi-Gaussian beams
    • Bessel beams
    • semiconductor laser
    • axicon
    • beam propagation parameter

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