Influence of the axicon characteristics and beam propagation parameter M2 on the formation of Bessel beams from semiconductor lasers

G. S. Sokolovskii; V. V. Dudelev; S. N. Losev; M. Butkus; K. K. Soboleva; A. I. Sobolev; A. G. Deryagin; V. I. Kuchinskii; W. Sibbett; E. U. Rafailov

doi:10.1070/QE2013v043n05ABEH015170

Influence of the axicon characteristics and beam propagation parameter M²on the formation of Bessel beams from semiconductor lasers

G. S. Sokolovskii, V. V. Dudelev, S. N. Losev, M. Butkus, K. K. Soboleva, A. I. Sobolev, A. G. Deryagin, V. I. Kuchinskii, W. Sibbett, E. U. Rafailov

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24 Citations (Scopus)

Abstract

We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M-2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M-2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.

Original language	English
Pages (from-to)	423-427
Number of pages	5
Journal	Quantum Electronics
Volume	43
Issue number	5
DOIs	https://doi.org/10.1070/QE2013v043n05ABEH015170
Publication status	Published - 2013

Keywords

OBLIQUE ILLUMINATION
DIODES
LIGHT-BEAMS
quasi-Gaussian beams
Bessel beams
semiconductor laser
axicon
beam propagation parameter

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10.1070/QE2013v043n05ABEH015170

Cite this

Sokolovskii, G. S., Dudelev, V. V., Losev, S. N., Butkus, M., Soboleva, K. K., Sobolev, A. I., Deryagin, A. G., Kuchinskii, V. I., Sibbett, W., & Rafailov, E. U. (2013). Influence of the axicon characteristics and beam propagation parameter M²on the formation of Bessel beams from semiconductor lasers. Quantum Electronics, 43(5), 423-427. https://doi.org/10.1070/QE2013v043n05ABEH015170

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title = "Influence of the axicon characteristics and beam propagation parameter M2 on the formation of Bessel beams from semiconductor lasers",

abstract = "We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M-2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M-2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.",

keywords = "OBLIQUE ILLUMINATION, DIODES, LIGHT-BEAMS, quasi-Gaussian beams, Bessel beams, semiconductor laser, axicon, beam propagation parameter",

author = "Sokolovskii, {G. S.} and Dudelev, {V. V.} and Losev, {S. N.} and M. Butkus and Soboleva, {K. K.} and Sobolev, {A. I.} and Deryagin, {A. G.} and Kuchinskii, {V. I.} and W. Sibbett and Rafailov, {E. U.}",

year = "2013",

doi = "10.1070/QE2013v043n05ABEH015170",

language = "English",

volume = "43",

pages = "423--427",

journal = "Quantum Electronics",

issn = "1063-7818",

publisher = "Turpion Ltd",

number = "5",

}

Sokolovskii, GS, Dudelev, VV, Losev, SN, Butkus, M, Soboleva, KK, Sobolev, AI, Deryagin, AG, Kuchinskii, VI, Sibbett, W & Rafailov, EU 2013, 'Influence of the axicon characteristics and beam propagation parameter M²on the formation of Bessel beams from semiconductor lasers', Quantum Electronics, vol. 43, no. 5, pp. 423-427. https://doi.org/10.1070/QE2013v043n05ABEH015170

TY - JOUR

T1 - Influence of the axicon characteristics and beam propagation parameter M2 on the formation of Bessel beams from semiconductor lasers

AU - Sokolovskii, G. S.

AU - Dudelev, V. V.

AU - Losev, S. N.

AU - Butkus, M.

AU - Soboleva, K. K.

AU - Sobolev, A. I.

AU - Deryagin, A. G.

AU - Kuchinskii, V. I.

AU - Sibbett, W.

AU - Rafailov, E. U.

PY - 2013

Y1 - 2013

N2 - We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M-2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M-2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.

AB - We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M-2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M-2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.

KW - OBLIQUE ILLUMINATION

KW - DIODES

KW - LIGHT-BEAMS

KW - quasi-Gaussian beams

KW - Bessel beams

KW - semiconductor laser

KW - axicon

KW - beam propagation parameter

U2 - 10.1070/QE2013v043n05ABEH015170

DO - 10.1070/QE2013v043n05ABEH015170

M3 - Article

SN - 1063-7818

VL - 43

SP - 423

EP - 427

JO - Quantum Electronics

JF - Quantum Electronics

IS - 5