Abstract
We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M-2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M-2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.
Original language | English |
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Pages (from-to) | 423-427 |
Number of pages | 5 |
Journal | Quantum Electronics |
Volume | 43 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- OBLIQUE ILLUMINATION
- DIODES
- LIGHT-BEAMS
- quasi-Gaussian beams
- Bessel beams
- semiconductor laser
- axicon
- beam propagation parameter