Influence of the axicon characteristics and beam propagation parameter M2 on the formation of Bessel beams from semiconductor lasers

G. S. Sokolovskii; V. V. Dudelev; S. N. Losev; M. Butkus; K. K. Soboleva; A. I. Sobolev; A. G. Deryagin; V. I. Kuchinskii; W. Sibbett; E. U. Rafailov

doi:10.1070/QE2013v043n05ABEH015170

Influence of the axicon characteristics and beam propagation parameter M²on the formation of Bessel beams from semiconductor lasers

G. S. Sokolovskii
, V. V. Dudelev
, S. N. Losev
, M. Butkus
, K. K. Soboleva
, A. I. Sobolev
, A. G. Deryagin
, V. I. Kuchinskii
, W. Sibbett
, E. U. Rafailov

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M-2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M-2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.

Original language	English
Pages (from-to)	423-427
Number of pages	5
Journal	Quantum Electronics
Volume	43
Issue number	5
DOIs	https://doi.org/10.1070/QE2013v043n05ABEH015170
Publication status	Published - 2013

Keywords

OBLIQUE ILLUMINATION
DIODES
LIGHT-BEAMS
quasi-Gaussian beams
Bessel beams
semiconductor laser
axicon
beam propagation parameter

Access to Document

10.1070/QE2013v043n05ABEH015170

Cite this

Sokolovskii, G. S., Dudelev, V. V., Losev, S. N., Butkus, M., Soboleva, K. K., Sobolev, A. I., Deryagin, A. G., Kuchinskii, V. I., Sibbett, W., & Rafailov, E. U. (2013). Influence of the axicon characteristics and beam propagation parameter M²on the formation of Bessel beams from semiconductor lasers. Quantum Electronics, 43(5), 423-427. https://doi.org/10.1070/QE2013v043n05ABEH015170

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title = "Influence of the axicon characteristics and beam propagation parameter M2 on the formation of Bessel beams from semiconductor lasers",

abstract = "We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M-2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M-2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.",

keywords = "OBLIQUE ILLUMINATION, DIODES, LIGHT-BEAMS, quasi-Gaussian beams, Bessel beams, semiconductor laser, axicon, beam propagation parameter",

author = "Sokolovskii, \{G. S.\} and Dudelev, \{V. V.\} and Losev, \{S. N.\} and M. Butkus and Soboleva, \{K. K.\} and Sobolev, \{A. I.\} and Deryagin, \{A. G.\} and Kuchinskii, \{V. I.\} and W. Sibbett and Rafailov, \{E. U.\}",

year = "2013",

doi = "10.1070/QE2013v043n05ABEH015170",

language = "English",

volume = "43",

pages = "423--427",

journal = "Quantum Electronics",

issn = "1063-7818",

publisher = "Turpion Ltd",

number = "5",

}

Sokolovskii, GS, Dudelev, VV, Losev, SN, Butkus, M, Soboleva, KK, Sobolev, AI, Deryagin, AG, Kuchinskii, VI, Sibbett, W & Rafailov, EU 2013, 'Influence of the axicon characteristics and beam propagation parameter M²on the formation of Bessel beams from semiconductor lasers', Quantum Electronics, vol. 43, no. 5, pp. 423-427. https://doi.org/10.1070/QE2013v043n05ABEH015170

TY - JOUR

T1 - Influence of the axicon characteristics and beam propagation parameter M2 on the formation of Bessel beams from semiconductor lasers

AU - Sokolovskii, G. S.

AU - Dudelev, V. V.

AU - Losev, S. N.

AU - Butkus, M.

AU - Soboleva, K. K.

AU - Sobolev, A. I.

AU - Deryagin, A. G.

AU - Kuchinskii, V. I.

AU - Sibbett, W.

AU - Rafailov, E. U.

PY - 2013

Y1 - 2013

N2 - We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M-2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M-2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.

AB - We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M-2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M-2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.

KW - OBLIQUE ILLUMINATION

KW - DIODES

KW - LIGHT-BEAMS

KW - quasi-Gaussian beams

KW - Bessel beams

KW - semiconductor laser

KW - axicon

KW - beam propagation parameter

U2 - 10.1070/QE2013v043n05ABEH015170

DO - 10.1070/QE2013v043n05ABEH015170

M3 - Article

SN - 1063-7818

VL - 43

SP - 423

EP - 427

JO - Quantum Electronics

JF - Quantum Electronics

IS - 5