InGaAs quantum dot 1050 nm saturable absorber mirror: Investigation under high excitation condition

E. Jelmakas, R. Tomasiunas, K. Wilcox, E. Rafailov, I. Krestnikov

    Research output: Chapter in Book/Report/Conference proceedingOther chapter contribution

    Abstract

    In this paper, semiconductor saturable absorber mirror designed for the near-IR spectra and based on InGaAs quantum dots was investigated. Absorption saturation, absorption femtosecond recovery kinetics measured at various close to resonance quantum energies revealed the wavelength ~ 1050 nm as best performing absorption bleaching (highest value of 2 % for reflectivity change) for this sample. Nonlinear absorption, carrier thermalization appeared to govern carrier generation, their dynamics in the quantum dots.
    Original languageEnglish
    Title of host publicationICTON 2009: 11th International Conference on Transparent Optical Networks
    ISBN (Electronic)9781424448265
    DOIs
    Publication statusPublished - 1 Jan 2009

      Fingerprint

    Cite this

    Jelmakas, E., Tomasiunas, R., Wilcox, K., Rafailov, E., & Krestnikov, I. (2009). InGaAs quantum dot 1050 nm saturable absorber mirror: Investigation under high excitation condition. In ICTON 2009: 11th International Conference on Transparent Optical Networks https://doi.org/10.1109/ICTON.2009.5185281