In this paper, semiconductor saturable absorber mirror designed for the near-IR spectra and based on InGaAs quantum dots was investigated. Absorption saturation, absorption femtosecond recovery kinetics measured at various close to resonance quantum energies revealed the wavelength ~ 1050 nm as best performing absorption bleaching (highest value of 2 % for reflectivity change) for this sample. Nonlinear absorption, carrier thermalization appeared to govern carrier generation, their dynamics in the quantum dots.
|Title of host publication||ICTON 2009: 11th International Conference on Transparent Optical Networks|
|Publication status||Published - 1 Jan 2009|
Jelmakas, E., Tomasiunas, R., Wilcox, K., Rafailov, E., & Krestnikov, I. (2009). InGaAs quantum dot 1050 nm saturable absorber mirror: Investigation under high excitation condition. In ICTON 2009: 11th International Conference on Transparent Optical Networks https://doi.org/10.1109/ICTON.2009.5185281