TY - CHAP
T1 - InGaAs quantum dot 1050 nm saturable absorber mirror
T2 - Investigation under high excitation condition
AU - Jelmakas, E.
AU - Tomasiunas, R.
AU - Wilcox, K.
AU - Rafailov, E.
AU - Krestnikov, I.
PY - 2009/1/1
Y1 - 2009/1/1
N2 - In this paper, semiconductor saturable absorber mirror designed for the near-IR spectra and based on InGaAs quantum dots was investigated. Absorption saturation, absorption femtosecond recovery kinetics measured at various close to resonance quantum energies revealed the wavelength ~ 1050 nm as best performing absorption bleaching (highest value of 2 % for reflectivity change) for this sample. Nonlinear absorption, carrier thermalization appeared to govern carrier generation, their dynamics in the quantum dots.
AB - In this paper, semiconductor saturable absorber mirror designed for the near-IR spectra and based on InGaAs quantum dots was investigated. Absorption saturation, absorption femtosecond recovery kinetics measured at various close to resonance quantum energies revealed the wavelength ~ 1050 nm as best performing absorption bleaching (highest value of 2 % for reflectivity change) for this sample. Nonlinear absorption, carrier thermalization appeared to govern carrier generation, their dynamics in the quantum dots.
UR - http://www.scopus.com/inward/record.url?scp=70449419879&partnerID=8YFLogxK
U2 - 10.1109/ICTON.2009.5185281
DO - 10.1109/ICTON.2009.5185281
M3 - Other chapter contribution
AN - SCOPUS:70449419879
BT - ICTON 2009: 11th International Conference on Transparent Optical Networks
ER -