InGaAs quantum dot 1050 nm saturable absorber mirror: Investigation under high excitation condition

TY - CHAP

T1 - InGaAs quantum dot 1050 nm saturable absorber mirror

T2 - Investigation under high excitation condition

AU - Jelmakas, E.

AU - Tomasiunas, R.

AU - Wilcox, K.

AU - Rafailov, E.

AU - Krestnikov, I.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - In this paper, semiconductor saturable absorber mirror designed for the near-IR spectra and based on InGaAs quantum dots was investigated. Absorption saturation, absorption femtosecond recovery kinetics measured at various close to resonance quantum energies revealed the wavelength ~ 1050 nm as best performing absorption bleaching (highest value of 2 % for reflectivity change) for this sample. Nonlinear absorption, carrier thermalization appeared to govern carrier generation, their dynamics in the quantum dots.

AB - In this paper, semiconductor saturable absorber mirror designed for the near-IR spectra and based on InGaAs quantum dots was investigated. Absorption saturation, absorption femtosecond recovery kinetics measured at various close to resonance quantum energies revealed the wavelength ~ 1050 nm as best performing absorption bleaching (highest value of 2 % for reflectivity change) for this sample. Nonlinear absorption, carrier thermalization appeared to govern carrier generation, their dynamics in the quantum dots.

UR - https://www.scopus.com/pages/publications/70449419879

U2 - 10.1109/ICTON.2009.5185281

DO - 10.1109/ICTON.2009.5185281

M3 - Other chapter contribution

AN - SCOPUS:70449419879

BT - ICTON 2009: 11th International Conference on Transparent Optical Networks

ER -