Intensity dependence of quantum efficiency and photo-gating effects in thin film silicon solar cells

Keyphrases

• Thin-film Silicon Solar Cells 100%
• Intensity Dependence 100%
• Photogating 100%
• Quantum Efficiency 100%
• Gating Effect 100%
• Reverse Current 100%
• Quasi-steady-state Photoconductance 50%
• Defect Density 50%
• Low Intensity 50%
• Current-voltage Characteristics 50%
• Layer Thickness 50%
• Photoconductivity Measurement 50%
• Attendants 50%
• Microcrystalline Silicon Solar Cell 50%
• Thin-film Silicon 50%
• Ni-P 50%
• Field Regions 50%
• Low Crystallinity 50%
• Photon Flux 50%
• Low Field 50%
• Low-crystalline 50%
• S-shape 50%
• Mobility-lifetime Product 50%
• Space Charge 50%
• Developing Materials 50%
• Process Gases 50%
• Crystal Composition 50%
• Composition-dependent 50%
• Voltage Amplification 50%
• High Hole Mobility 50%
• Amorphous Cells 50%
• Silane Concentration 50%

Engineering

• Thin Films 100%
• Film Silicon Solar Cell 100%
• Light Incident 100%
• Quantum Efficiency 100%
• Crystallinity 50%
• Time-of-Flight 50%
• Defect Density 50%
• Film Silicon 50%
• Current-Voltage Characteristic 50%
• Layer Thickness 50%
• Microcrystalline Silicon Solar Cell 50%
• Space Charge 50%
• Field Region 50%
• Process Gas 50%
• Steep Increase 50%

Material Science

• Photoconductivity 100%
• Defect Density 100%
• Thin Films 100%
• Current-Voltage Characteristic 100%
• Silicon 100%
• Hole Mobility 100%
• Silane 100%
• Microcrystalline Silicon Solar Cell 100%
• Thin-Film Silicon Photovoltaics 100%