Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Ilya E. Titkov; Amit Yadav; Vera L. Zerova; Modestas Zulonas; Andrey F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Edik U. Rafailov

doi:10.1117/12.2040086

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Ilya E. Titkov, Amit Yadav, Vera L. Zerova, Modestas Zulonas, Andrey F. Tsatsulnikov, Wsevolod V. Lundin, Alexey V. Sakharov, Edik U. Rafailov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices IX
Editors	Jen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Joachim Piprek, Euijoon Yoon, Hiroshi Fujioka
Place of Publication	Bellingham
Publisher	SPIE-International Society for Optical Engineering
ISBN (Print)	9780819498991
DOIs	https://doi.org/10.1117/12.2040086
Publication status	Published - 2014
Event	SPIE Photonics West 2014: Gallium Nitride Materials and Devices IX - The Moscone Center, San Francisco, United States Duration: 3 Feb 2014 → 6 Feb 2014 http://spie.org/x106299.xml

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	8986

Conference

Conference	SPIE Photonics West 2014: Gallium Nitride Materials and Devices IX
Country/Territory	United States
City	San Francisco
Period	3/02/14 → 6/02/14
Internet address	http://spie.org/x106299.xml

Access to Document

10.1117/12.2040086

Cite this

Titkov, I. E., Yadav, A., Zerova, V. L., Zulonas, M., Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., & Rafailov, E. U. (2014). Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED. In J.-I. Chyi, Y. Nanishi, H. Morkoç, J. Piprek, E. Yoon, & H. Fujioka (Eds.), Gallium Nitride Materials and Devices IX Article 89862A (Proceedings of SPIE; Vol. 8986). SPIE-International Society for Optical Engineering. https://doi.org/10.1117/12.2040086

Titkov, Ilya E. ; Yadav, Amit ; Zerova, Vera L. et al. / Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED. Gallium Nitride Materials and Devices IX. editor / Jen-Inn Chyi ; Yasushi Nanishi ; Hadis Morkoç ; Joachim Piprek ; Euijoon Yoon ; Hiroshi Fujioka. Bellingham : SPIE-International Society for Optical Engineering, 2014. (Proceedings of SPIE).

@inproceedings{c8082068d33b43ef84a3d026b643bec0,

title = "Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED",

abstract = "Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.",

author = "Titkov, {Ilya E.} and Amit Yadav and Zerova, {Vera L.} and Modestas Zulonas and Tsatsulnikov, {Andrey F.} and Lundin, {Wsevolod V.} and Sakharov, {Alexey V.} and Rafailov, {Edik U.}",

year = "2014",

doi = "10.1117/12.2040086",

language = "English",

isbn = "9780819498991",

series = "Proceedings of SPIE",

publisher = "SPIE-International Society for Optical Engineering",

editor = "Chyi, {Jen-Inn } and Nanishi, {Yasushi } and Morko{\c c}, {Hadis } and Piprek, {Joachim } and Yoon, {Euijoon } and Fujioka, {Hiroshi }",

booktitle = "Gallium Nitride Materials and Devices IX",

note = "SPIE Photonics West 2014: Gallium Nitride Materials and Devices IX ; Conference date: 03-02-2014 Through 06-02-2014",

url = "http://spie.org/x106299.xml",

}

Titkov, IE, Yadav, A, Zerova, VL, Zulonas, M, Tsatsulnikov, AF, Lundin, WV, Sakharov, AV & Rafailov, EU 2014, Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED. in J-I Chyi, Y Nanishi, H Morkoç, J Piprek, E Yoon & H Fujioka (eds), Gallium Nitride Materials and Devices IX., 89862A, Proceedings of SPIE, vol. 8986, SPIE-International Society for Optical Engineering, Bellingham, SPIE Photonics West 2014: Gallium Nitride Materials and Devices IX, San Francisco, United States, 3/02/14. https://doi.org/10.1117/12.2040086

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED. / Titkov, Ilya E.; Yadav, Amit; Zerova, Vera L. et al.
Gallium Nitride Materials and Devices IX. ed. / Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka. Bellingham: SPIE-International Society for Optical Engineering, 2014. 89862A (Proceedings of SPIE; Vol. 8986).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

AU - Titkov, Ilya E.

AU - Yadav, Amit

AU - Zerova, Vera L.

AU - Zulonas, Modestas

AU - Tsatsulnikov, Andrey F.

AU - Lundin, Wsevolod V.

AU - Sakharov, Alexey V.

AU - Rafailov, Edik U.

PY - 2014

Y1 - 2014

N2 - Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

AB - Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

UR - http://www.scopus.com/inward/record.url?scp=84901749789&partnerID=8YFLogxK

U2 - 10.1117/12.2040086

DO - 10.1117/12.2040086

M3 - Conference contribution

AN - SCOPUS:84901749789

SN - 9780819498991

T3 - Proceedings of SPIE

BT - Gallium Nitride Materials and Devices IX

A2 - Chyi, Jen-Inn

A2 - Nanishi, Yasushi

A2 - Morkoç, Hadis

A2 - Piprek, Joachim

A2 - Yoon, Euijoon

A2 - Fujioka, Hiroshi

PB - SPIE-International Society for Optical Engineering

CY - Bellingham

T2 - SPIE Photonics West 2014: Gallium Nitride Materials and Devices IX

Y2 - 3 February 2014 through 6 February 2014

ER -

Titkov IE, Yadav A, Zerova VL, Zulonas M, Tsatsulnikov AF, Lundin WV et al. Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED. In Chyi JI, Nanishi Y, Morkoç H, Piprek J, Yoon E, Fujioka H, editors, Gallium Nitride Materials and Devices IX. Bellingham: SPIE-International Society for Optical Engineering. 2014. 89862A. (Proceedings of SPIE). doi: 10.1117/12.2040086

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Internal and external quantum efficiencies of InGaN/GaN LEDs with shortperiod superlattice (SPSL)

SPIE Photonics West 2014: Gallium Nitride Materials and Devices IX

SPIE Photonics West 2014: Gallium Nitride Materials and Devices IX

Cite this

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Research output

Internal and external quantum efficiencies of InGaN/GaN LEDs with shortperiod superlattice (SPSL)

Activities

SPIE Photonics West 2014: Gallium Nitride Materials and Devices IX

SPIE Photonics West 2014: Gallium Nitride Materials and Devices IX

Cite this