Investigation of collection efficiencies much larger than unity in a-Si : H p-i-n structures

C. Main, J. H. Zollondz, S. Reynolds, W. Gao, R. Bruggemann, M. J. Rose

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    This work examines the influence of limited instrumental bandwidth on the accuracy of recovery of the density of localized states in semiconductors from transient and modulated photoconductivity data. Paradoxically, knowledge of the short-time transient photoresponse can be vital in the estimation, via a Fourier transform, of the density of deep-lying states. We demonstrate that
    retention of the natural response of a bandwidth limited system, although subject to distortion at short times, can lead to much improved accuracy in density of states determination than simple truncation of the short-time response. It is shown that this improvement arises simply from the integrating effect of a bandwidth limited system over short time intervals, which makes it possible to access and exploit information originating at times much shorter than the instrumentation rise time. These concepts are exemplified using computer simulated transient photoconductivity for several model systems including one which mimics the expected density of states in amorphous
    silicon.
    Original languageEnglish
    Pages (from-to)296-301
    Number of pages6
    JournalJournal of Applied Physics
    Volume85
    Issue number1
    DOIs
    Publication statusPublished - 1999

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    unity
    bandwidth
    photoconductivity
    time response
    recovery
    intervals
    approximation

    Cite this

    Main, C. ; Zollondz, J. H. ; Reynolds, S. ; Gao, W. ; Bruggemann, R. ; Rose, M. J. / Investigation of collection efficiencies much larger than unity in a-Si : H p-i-n structures. In: Journal of Applied Physics. 1999 ; Vol. 85, No. 1. pp. 296-301.
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    Investigation of collection efficiencies much larger than unity in a-Si : H p-i-n structures. / Main, C.; Zollondz, J. H.; Reynolds, S.; Gao, W.; Bruggemann, R.; Rose, M. J.

    In: Journal of Applied Physics, Vol. 85, No. 1, 1999, p. 296-301.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Investigation of collection efficiencies much larger than unity in a-Si : H p-i-n structures

    AU - Main, C.

    AU - Zollondz, J. H.

    AU - Reynolds, S.

    AU - Gao, W.

    AU - Bruggemann, R.

    AU - Rose, M. J.

    PY - 1999

    Y1 - 1999

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    AB - This work examines the influence of limited instrumental bandwidth on the accuracy of recovery of the density of localized states in semiconductors from transient and modulated photoconductivity data. Paradoxically, knowledge of the short-time transient photoresponse can be vital in the estimation, via a Fourier transform, of the density of deep-lying states. We demonstrate thatretention of the natural response of a bandwidth limited system, although subject to distortion at short times, can lead to much improved accuracy in density of states determination than simple truncation of the short-time response. It is shown that this improvement arises simply from the integrating effect of a bandwidth limited system over short time intervals, which makes it possible to access and exploit information originating at times much shorter than the instrumentation rise time. These concepts are exemplified using computer simulated transient photoconductivity for several model systems including one which mimics the expected density of states in amorphoussilicon.

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