Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.
|Title of host publication||IEEE International Conference on Microelectronic Test Structures|
|Publisher||IEEE Computer Society|
|Number of pages||6|
|Publication status||Published - 20 May 2010|
Smith, S., Tsiamis, A., Stevenson, J. T. M., Walton, A. J., McCallum, M., & Hourd, A. C. (2010). Kelvin resistor structures for the investigation of corner serif proximity correction. In IEEE International Conference on Microelectronic Test Structures (pp. 24-29). IEEE Computer Society. https://doi.org/10.1109/ICMTS.2010.5466866