Kelvin resistor structures for the investigation of corner serif proximity correction

S. Smith; A. Tsiamis; J.T.M. Stevenson; A.J. Walton; M. McCallum; A.C. Hourd

doi:10.1109/ICMTS.2010.5466866

Kelvin resistor structures for the investigation of corner serif proximity correction

S. Smith, A. Tsiamis, J.T.M. Stevenson, A.J. Walton, M. McCallum, A.C. Hourd

Research output: Chapter in Book/Report/Conference proceeding › Other chapter contribution

1 Citation (Scopus)

Abstract

Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.

Original language	English
Title of host publication	IEEE International Conference on Microelectronic Test Structures
Publisher	IEEE Computer Society
Pages	24-29
Number of pages	6
ISBN (Electronic)	9781424469147
ISBN (Print)	9781424469123
DOIs	https://doi.org/10.1109/ICMTS.2010.5466866
Publication status	Published - 20 May 2010

Access to Document

10.1109/ICMTS.2010.5466866

Cite this

@inbook{5827bc5bd531468f8219a5c055d9ffe2,

title = "Kelvin resistor structures for the investigation of corner serif proximity correction",

abstract = "Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.",

author = "S. Smith and A. Tsiamis and J.T.M. Stevenson and A.J. Walton and M. McCallum and A.C. Hourd",

year = "2010",

month = may,

day = "20",

doi = "10.1109/ICMTS.2010.5466866",

language = "English",

isbn = "9781424469123",

pages = "24--29",

booktitle = "IEEE International Conference on Microelectronic Test Structures",

publisher = "IEEE Computer Society",

}

TY - CHAP

T1 - Kelvin resistor structures for the investigation of corner serif proximity correction

AU - Smith, S.

AU - Tsiamis, A.

AU - Stevenson, J.T.M.

AU - Walton, A.J.

AU - McCallum, M.

AU - Hourd, A.C.

PY - 2010/5/20

Y1 - 2010/5/20

N2 - Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.

AB - Electrical test structures for the characterisation of Optical Proximity Correction (OPC) have been fabricated in thin aluminium using i-line lithography and reactive ion etching. Initial electrical measurements are presented which show an increase in the resistance of a right angled section of Al track as the level of OPC on the inside corner is increased. Structures with OPC applied to the outer corner do not show the same change in resistance. SEM images of similar Al test structures clearly show the effects of applying OPC and suggest that inner corner serif OPC leads to a narrowing of the conducting track.

UR - http://www.scopus.com/inward/record.url?scp=77953890948&partnerID=8YFLogxK

U2 - 10.1109/ICMTS.2010.5466866

DO - 10.1109/ICMTS.2010.5466866

M3 - Other chapter contribution

AN - SCOPUS:77953890948

SN - 9781424469123

SP - 24

EP - 29

BT - IEEE International Conference on Microelectronic Test Structures

PB - IEEE Computer Society

ER -

Kelvin resistor structures for the investigation of corner serif proximity correction

Abstract

Access to Document

Other files and links

Fingerprint

Cite this